Datasheet

LTC3499/LTC3499B
3
3499fc
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Specification is guaranteed by design and not 100% tested in
production.
Note 3:The LTC3499E/LTC3499BE are guaranteed to meet device
specifications from 0°C to 85°C. Specifications over the –40°C to 85°C
operating temperature are assured by design, characterization and
correlation with statistical process controls.
The l denotes specifications that apply over the full operating temperature
range, otherwise specifications are at T
A
= 25°C. V
IN
= 2.4V, V
OUT
= 5V, SHDN = 2.4V, T
A
= T
J
unless otherwise noted. (Note 3)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
I
FB
FB Input Current V
FB
= 1.22V 3 50 nA
I
VIN
V
IN
Quiescent Current No Output Load
l
300 600 µA
I
SD
V
IN
Quiescent Current in Shutdown SHDN = 0V, V
OUT
= 0V 0.1 1 µA
I
BURST
Quiescent Current – Burst Mode Operation V
IN
Current at 2.4V (LTC3499 Only)
V
OUT
Current at 5V (LTC3499 Only)
20
1.5
µA
µA
I
NMOS
NMOS Switch Leakage Current V
SW
= 6V 0.1 5 µA
I
PMOS
PMOS Switch Leakage Current V
OUT
= 6V, V
SW
= 0V 0.1 5 µA
R
NMOS
NMOS Switch On Resistance V
OUT
= 3.3V
V
OUT
= 5V
0.45
0.4
Ω
Ω
R
PMOS
PMOS Switch On Resistance V
OUT
= 3.3V
V
OUT
= 5V
0.58
0.45
Ω
Ω
I
LIM
NMOS Current Limit
l
0.75 1 A
t
DLY, ILIM
Current Limit Delay to Output Note 2 60 ns
D
MAX
Maximum Duty Cycle
l
80 85 %
D
MIN
Minimum Duty Cycle
l
0 %
f
OSC
Frequency Accuracy
l
1 1.2 1.4 MHz
G
mEA
Error Amplifier Transconductance 40 µmhos
I
SOURCE
Error Amplifier Source Current –5 µA
I
SINK
Error Amplifier Sink Current 5 µA
I
SS
SS Current Source V
SS
= 1V –3 µA
V
OV
V
OUT
Overvoltage Threshold 6.8 V
V
OV(HYST)
V
OUT
Overvoltage Hysteresis 400 mV
Shutdown
V
SHDN(LOW)
SHDN Input Low Voltage
l
0.2 V
V
SHDN(HIGH)
SHDN Input High Voltage Measured at SW
l
1.2 V
I
SD
SHDN Input Current 1 µA
Reverse Battery
I
VOUT,REVBATT
V
OUT
Reverse-Battery Current V
OUT
= 0V, V
IN
= V
SHDN
= V
SW
= –6V
l
5 µA
I
VIN,REVBATT
V
IN
and V
SW
Reverse-Battery Current V
OUT
= 0V, V
IN
= V
SHDN
= V
SW
= –6V
l
–5 µA
I
SHDN,REVBATT
SHDN Reverse-Battery Current V
OUT
= 0V, V
IN
= V
SHDN
= V
SW
= –6V
l
–5 µA
Note 4: These ICs include overtemperature protection that is intended
to protect the devices during momentary overload conditions. Junction
temperatures will exceed 125°C when overtemperature protection is
active. Continuous operation above the specified maximum operating
temperature range may impair device reliability.