Datasheet

3
LTC3413
3413fb
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Switch On-Resistance
vs Temperature
Switch On-Resistance
vs Input Voltage
TEMPERATURE (°C)
–40
0
ON-RESISTANCE (mΩ)
20
40
60
80
040
80
120
3413 G04
100
120
–20 20
60
100
PFET
ON-RESISTANCE
NFET
ON-RESISTANCE
V
IN
= 3.3V
INPUT VOLTAGE (V)
2.5
0
ON-RESISTANCE (mΩ)
20
40
60
80
100
120
3 3.5 4 4.5
3413 G05
5
PFET ON-RESISTANCE
NFET ON-RESISTANCE
T
A
= 25°C
INPUT VOLTAGE (V)
2.5
0
LEAKAGE CURRENT (nA)
0.5
1.0
1.5
2.0
2.5
3
3.5 4 4.5
3413 G06
5 5.5
PFET
NFET
T
A
= 25°C
Switch Leakage vs Input Voltage
LOAD CURRENT (A)
0.01
40
EFFICIENCY (%)
50
60
70
80
0.1 1 10
3413 G01
30
20
10
0
90
100
V
IN
= 2.5V
V
OUT
= 1.25V
T
A
= 25°C
V
IN
= 3.3V
INPUT VOLTAGE (V)
2.5
EFFICIENCY (%)
50
60
70
4.0
5.0
3413 G02
40
30
20
3.0 3.5 4.5
80
90
100
5.5
LOAD = 1A
LOAD = 3A
LOAD = 100mA
V
OUT
= 1.25V
T
A
= 25°C
LOAD CURRENT (A)
0
–0.30
ΔV
OUT
/V
OUT
(%)
–0.25
–0.20
–0.15
–0.10
0
0.5
1.0 1.5 2.0
3413 G03
2.5 3.0
–0.05
T
A
= 25°C
Efficiency vs Load Current Efficiency vs Input Voltage Load Regulation
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3413E is guaranteed to meet performance specifications
from 0°C to 70°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls. LTC3413I is guaranteed to meet specified
performance from –40°C to 85°C.
Note 3: The LTC3413 is tested in a feedback loop that adjusts V
FB
to
achieve a specified error amplifier output voltage (I
TH
).
Note 4: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 5: T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
as follows: LTC3413E: T
J
= T
A
+ (P
D
• 38°C/W)
Note 6: 2MHz operation is guaranteed by design and not production tested.
Note 7: Shutdown current and SW leakage current are only tested during
wafer sort.
Note 8: This IC includes overtemperature protection that is intended to
protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
ELECTRICAL CHARACTERISTICS