Datasheet

LTC3413
3
3413fc
ELECTRICAL CHARACTERISTICS
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
IN
= 3.3V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
f
OSC
Switching Frequency
Switching Frequency Range
R
OSC
= 309k
(Note 6)
0.88
0.30
1.00 1.12
2.00
MHz
MHz
R
PFET
R
DS(ON)
of P-Channel FET I
SW
= 300mA 85 110 mΩ
R
NFET
R
DS(ON)
of N-Channel FET I
SW
= 300mA 65 90 mΩ
I
LIMIT
Peak Current Limit 3.8 5.4 A
V
UVLO
Undervoltage Lockout Threshold 1.75 2 2.25 V
I
LSW
SW Leakage Current V
RUN
= 0V, V
IN
= 5.5V (Note 7) 0.1 1 μA
V
RUN
RUN Threshold 0.5 0.65 0.8 V
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3413E is guaranteed to meet performance specifi cations
from 0°C to 70°C. Specifi cations over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls. LTC3413I is guaranteed to meet specifi ed
performance from –40°C to 85°C.
Note 3: The LTC3413 is tested in a feedback loop that adjusts V
FB
to
achieve a specifi ed error amplifi er output voltage (I
TH
).
Note 4: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
TYPICAL PERFORMANCE CHARACTERISTICS
Effi ciency vs Load Current Effi ciency vs Input Voltage
Load Regulation
LOAD CURRENT (A)
0.01
40
EFFICIENCY (%)
50
60
70
80
0.1 1 10
3413 G01
30
20
10
0
90
100
V
IN
= 2.5V
V
OUT
= 1.25V
T
A
= 25°C
V
IN
= 3.3V
INPUT VOLTAGE (V)
2.5
EFFICIENCY (%)
50
60
70
4.0
5.0
3413 G02
40
30
20
3.0 3.5 4.5
80
90
100
5.5
LOAD = 1A
LOAD = 3A
LOAD = 100mA
V
OUT
= 1.25V
T
A
= 25°C
LOAD CURRENT (A)
0
–0.30
ΔV
OUT
/V
OUT
(%)
–0.25
–0.20
–0.15
–0.10
0
0.5
1.0 1.5 2.0
3413 G03
2.5 3.0
–0.05
T
A
= 25°C
Note 5: T
J
is calculated from the ambient temperature TA and power
dissipation P
D
as follows: LTC3413E: T
J
= T
A
+ (P
D
• 38°C/W)
Note 6: 2MHz operation is guaranteed by design and not production tested.
Note 7: Shutdown current and SW leakage current are only tested during
wafer sort.
Note 8: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specifi ed maximum operating junction
temperature may impair device reliability.