Datasheet

LTC3406A
3
3406afa
INPUT VOLTAGE (V)
2
0
EFFICIENCY (%)
10
30
40
50
100
70
3
4
3406A G01
20
80
90
60
5
6
I
L
= 10mA
I
L
= 100mA
I
L
= 600mA
V
OUT
= 1.8V
OUTPUT CURRENT (mA)
30
EFFICIENCY (%)
90
100
20
10
80
50
70
60
40
0.1 10 100 1000
3406A G02
0
1
V
IN
= 2.7V
V
IN
= 3.6V
V
IN
= 4.2V
V
OUT
= 1.2V
OUTPUT CURRENT (mA)
30
EFFICIENCY (%)
90
100
20
10
80
50
70
60
40
0.1 10 100 1000
3406A G03
0
1
V
IN
= 2.7V
V
IN
= 3.6V
V
IN
= 4.2V
V
OUT
= 2.5V
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3406AE is guaranteed to meet performance specifi cations
from 0°C to 85°C. Specifi cations over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls. The LTC3406AI is guaranteed to meet the
specifi ed performance over the full –40°C to 125°C operating temperature
range.
Note 3: T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formula:
LTC3406A: T
J
= T
A
+ (P
D
)(250°C/W)
Note 4: The LTC3406A is tested in a proprietary test mode that connects
V
FB
to the output of the error amplifi er.
Note 5: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency.
Note 6: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specifi ed maximum operating junction
temperature may impair device reliability.
Note 7: Limited by long term current density considerations.
Effi ciency vs Input Voltage Effi ciency vs Load Current Effi ciency vs Load Current
TYPICAL PERFORMANCE CHARACTERISTICS
(From Front Page Figure Except for the Resistive Divider Resistor Values)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
R
NFET
R
DS(ON)
of N-Channel FET I
SW
= –100mA 0.21 0.35 Ω
I
LSW
SW Leakage V
RUN
= 0V, V
SW
= 0V or 5V, V
IN
= 5V ±0.01 ±1 μA
t
SOFT-START
Soft-Start Time V
FB
from 10% to 90% Full-Scale 0.6 0.9 1.2 ms
V
RUN
RUN Threshold
●
0.3 1 1.5 V
I
RUN
RUN Leakage Current
●
±0.01 ±1 μA
The ● denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
IN
= 3.6V unless otherwise specifi ed.