Datasheet

LTC3230
3
3230fa
PARAMETER CONDITIONS MIN TYP MAX UNITS
CPO Short Circuit Detection
Threshold Voltage
●
0.4 1.3 V
Charge Pump (CPO)
1x Mode Output Voltage I
CPO
= 0mA V
IN
V
1.5x Mode Output Voltage I
CPO
= 0mA 4.5 V
2x Mode Output Voltage I
CPO
= 0mA 5.0 V
1x Mode Output Impedance 1.6
Ω
1.5x Mode Output Impedance V
IN
= 3.4V, V
CPO
= 4.6V (Note 6) 7.9
Ω
2x Mode Output Impedance V
IN
= 3.4V, V
CPO
= 5.1V (Note 6) 9.2
Ω
Clock Frequency 0.9 MHz
Mode Switching Delay 0.5 ms
t
EN
Current Source Enable Time (ENM, ENS = High)
(Note 7)
●
250 μs
LDO1, LDO2
Bias per 1 LDO ENM = ENS = Low 125 μA
Additional DC Bias per LDO 60 μA
Output Voltage Accuracy I
OUT
= 100μA
●
–3 3 %
Current Limit
●
280 475 750 mA
Line Regulation V
LDO
= 1.8V, I
OUT
= 50mA 0.1 %/V
Load Regulation V
IN
= 3.6V, 100μA < I
LDO
< 200mA 0.65 %
Dropout Voltage LDO2, V
LDO
= 3.3V, V
IN
– V
LDO
at V
LDO
3% Down
from V
LDO
Measureed at V
IN
= 4.3V
250 mV
V1, V2
V
IL
●
0.2 V
V
IH
●
V
IN
– 0.2 V
Shutdown Input Current ENLDO1 = ENLDO2 = Low –1 1 μA
Active Input Current ENLDO1 = ENLDO2 = High –3 3 μA
ENM, ENS, ENLDO1, ENLDO2
V
IL
●
0.4 V
V
IH
●
1.4 V
I
IH
V
IH
= 3.6V 3 μA
I
IL
V
IL
= 0V
●
–1 1 μA
ENM, ENS Timing
t
PWH
High Pulse Width
●
0.2 μs
t
PWL
Low Pulse Width 0.2 20 μs
t
SD
Low Time to Shutdown (ENM, ENS = Low)
●
250 μs
R
SET
V
RSET
●
768 800 832 mV
I
RSET
●
70 μA
ELECTRICAL CHARACTERISTICS
The ● denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
IN
= 3.6V, C1 = C2 = C4 = C5 = C6 = 1μF, R
SET
= 17.4k, ENM = ENS =
high, ENLDO1 = ENLDO2 = low, unless otherwise noted.