Datasheet
LTC3220/LTC3220-1
4
32201fc
TYPICAL PERFORMANCE CHARACTERISTICS
Mode Switch Dropout Times 1.5x Mode CPO Ripple 2x Mode CPO Ripple
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Based on long term current density limitations.
Note 3: The LTC3220E/LTC3220E-1 are guaranteed to meet performance
specifi cations from 0°C to 85°C. Specifi cations over the –40°C to 85°C
operating temperature range are assured by design, characterization and
correlation with statistical process controls. The LTC3220I/LTC3220I-1
are guaranteed to meet performance specifi cations over the full –40°C to
125°C operating temperature range.
T
A
= 25°C unless otherwise noted.
Note 4: These devices include overtemperature protection that is intended
to protect the devices during momentary overload conditions. Junction
temperatures will exceed 125°C when overtemperature protection is
active. Continuous operation above the specifi ed maximum operating
junction temperature may result in device degradation or failure.
Note 5: 1.5x mode output impedance is defi ned as (1.5V
IN
– V
CPO
)/I
OUT
.
2x mode output impedance is defi ned as (2V
IN
– V
CPO
)/I
OUT
.
Note 6: All values are referenced to V
IH
and V
IL
levels.
Note 7: Guaranteed by design.
V
CPO
1V/DIV
V
IN
= 3.6V 250μs/DIV
3220 G01
1s
1.5s
2s
V
CPO
20mV/DIV
AC COUPLED
V
IN
= 3.6V
I
CPO
= 200mA
C
CPO
= 4.7μF
500ns/DIV
3220 G02
V
CPO
20mV/DIV
AC COUPLED
V
IN
= 3.6V
I
CPO
= 200mA
C
CPO
= 4.7μF
500ns/DIV
3220 G03
ELECTRICAL CHARACTERISTICS
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
IN
= 3.6V, DV
CC
= 3V, RST = high, C1 = C2 = C3 = 2.2μF, C4 = 4.7μF,
unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
t
HD,DAT(OUT)
Data Hold Time 0 900 ns
t
HD,DAT(IN)
Input Data Hold Time 0 ns
t
SU,DAT
Data Setup Time 100 ns
t
LOW
Clock Low Period 1.3 μs
t
HIGH
Clock High Period 0.6 μs
t
f
Clock Data Fall Time 20 300 ns
t
r
Clock Data Rise Time 20 300 ns
t
SP
Spike Supression Time 50 ns