Datasheet

4
LTC1744
1744f
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
f
SAMPLE(MAX)
Maximum Sampling Frequency ● 50 MHz
t
1
ENC Low Time (Note 9) ● 9.5 10 1000 ns
t
2
ENC High Time (Note 9) ● 9.5 10 1000 ns
t
3
Aperture Delay of Sample-and-Hold 0 ns
t
4
ENC to Data Delay C
L
= 10pF (Note 8) ● 1.4 4.5 8 ns
t
5
ENC to CLKOUT Delay C
L
= 10pF (Note 8) ● 0.5 2.3 5 ns
t
6
CLKOUT to Data Delay C
L
= 10pF (Note 8) ● 0 2.2 ns
t
7
DATA Access Time After OE ↓ C
L
= 10pF (Note 8) 10 25 ns
t
8
BUS Relinquish Time (Note 8) 10 25 ns
Data Latency 5 cycles
The ● indicates specifications which apply over the full operating temperature
range, otherwise specifications are at T
A
= 25°C. (Note 5)
TI I G CHARACTERISTICS
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Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: All voltage values are with respect to ground with GND
(unless otherwise noted).
Note 3: When these pin voltages are taken below GND or above V
DD
, they
will be clamped by internal diodes. This product can handle input currents
of greater than 100mA below GND or above V
DD
without latchup.
Note 4: When these pin voltages are taken below GND, they will be
clamped by internal diodes. This product can handle input currents of
>100mA below GND without latchup. These pins are not clamped to V
DD
.
Note 5: V
DD
= 5V, f
SAMPLE
= 50MHz, differential ENC/ENC = 2V
P-P
50MHz
sine wave, input range = ±1.6V differential, unless otherwise specified.
Note 6: Integral nonlinearity is defined as the deviation of a code from a
straight line passing through the actual endpoints of the transfer curve.
The deviation is measured from the center of the quantization band.
Note 7: Bipolar offset is the offset voltage measured from –0.5 LSB
when the output code flickers between 00 0000 0000 0000 and 11
1111 1111 1111.
Note 8: Guaranteed by design, not subject to test.
Note 9: Recommended operating conditions.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
DD
Positive Supply Voltage 4.75 5.25 V
I
DD
Positive Supply Current ● 245 300 mA
P
DIS
Power Dissipation ● 1.2 1.5 W
OV
DD
Digital Output Supply Voltage 0.5 V
DD
V
The ● indicates specifications which apply over the full operating temperature
range, otherwise specifications are at T
A
= 25°C. (Note 5)
POWER REQUIRE E TS
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SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
IH
High Level Input Voltage V
DD
= 5.25V ● 2.4 V
V
IL
Low Level Input Voltage V
DD
= 4.75V ● 0.8 V
I
IN
Digital Input Current V
IN
= 0V to V
DD
● ±10 µA
C
IN
Digital Input Capacitance MSBINV and OE Only 1.5 pF
V
OH
High Level Output Voltage OV
DD
= 4.75V I
O
= –10µA 4.74 V
I
O
= –200µA ● 4V
V
OL
Low Level Output Voltage OV
DD
= 4.75V I
O
= 160µA 0.05 V
I
O
= 1.6mA ● 0.1 0.4 V
I
OZ
Hi-Z Output Leakage D13 to D0 V
OUT
= 0V to V
DD
, OE = High ● ±10 µA
C
OZ
Hi-Z Output Capacitance D13 to D0 OE = High (Note 8) ● 15 pF
I
SOURCE
Output Source Current V
OUT
= 0V –50 mA
I
SINK
Output Sink Current V
OUT
= 5V 50 mA
The ● indicates specifications which apply over the full
operating temperature range, otherwise specifications are at T
A
= 25°C. (Note 5)
DIGITAL I PUTS A D DIGITAL OUTPUTS
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