Datasheet

4
LTC1702
1702fa
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Efficiency vs Load Current
TEMPERATURE (°C)
–50
SUPPLY CURRENT (mA)
2.4
PV
CC
V
CC
25
1702 G04
1.8
1.4
–25 0 50
1.2
1.0
2.6
2.2
2.0
1.6
75 100 125
BOOST1, BOOST2
TEST CIRCUIT 1
C
L
= 0pF
Transient Response
TEMPERATURE (°C)
–50
–2.5
NORMALIZED FREQUENCY (%)
–2.0
–1.0
–0.5
0
2.5
1.0
0
50
75
1702 G05
–1.5
1.5
2.0
0.5
–25
25
100
125
V
CC
= 5V
TEMPERATURE (°C)
–50
0.4
R
ON
(Ω)
0.5
0.7
0.8
0.9
1.4
1.1
0
50
75
1702 G06
0.6
1.2
1.3
1.0
–25
25
100
125
V
PVCC
= 5V
V
BOOST
– V
SW
= 5V
MOSFET Driver Supply Current
vs Gate Capacitance
Supply Current vs Temperature
Normalized Frequency
vs Temperature Driver R
ON
vs Temperature
RUN/SS Source Current
vs Temperature
TEMPERATURE (°C)
–50
SOURCE CURRENT (µA)
4.0
4.5
5.0
25 75
1702 G07
3.5
3.0
–25 0
50 100 125
2.5
2.0
V
CC
= 5V
Nonoverlap Time vs Temperature Driver Rise/Fall vs Temperature
LOAD CURRENT (A)
0
70
EFFICIENCY (%)
80
90
100
510
1702 G01
15
V
IN
= 5V
V
OUT
= 3.3V
V
OUT
= 2.5V
V
OUT
= 1.6V
V
IN
= 5V
V
OUT
= 1.8V
I
LOAD
= 0A-10A-0A
±2.2% MAX DEVIATION
1702 G02
GATE CAPACITANCE (pF)
0
25
30
35
6000 8000
1702 G03
20
15
2000 4000 10000
10
5
0
DRIVER SUPPLY CURRENT (mA)
TEST CIRCUIT 1
ONE DRIVER LOADED
MULTIPLY BY # OF ACTIVE
DRIVERS TO OBTAIN TOTAL
DRIVER SUPPLY CURRENT
TEMPERATURE (°C)
–50
40
50
70
25 75
1702 G08
30
20
–25 0
50 100 125
10
0
60
NONOVERLAP (ns)
TEST CIRCUIT 1
C
L
= 2000pF
BG FALLING EDGE
TG RISING EDGE
TG FALLING EDGE
BG RISING EDGE
TEMPERATURE (°C)
–50 –25
12
RISE/FALL TIME (ns)
12
15
0
50
75
1702 G09
11
14
13
25
100
125
TEST CIRCUIT 1
C
L
= 2000pF
20mV/
DIV
10µs/DIV