Datasheet

3
LTC1473
TYPICAL PERFORMANCE CHARACTERISTICS
U
W
DC Supply Current
vs Supply Voltage
SUPPLY VOLTAGE (V)
0
SUPPLY CURRENT (µA)
80
120
40
1473 G01
40
0
10
20
30
5
15
25
35
160
60
100
20
140
V
DIODE
= V
IN1
= 5V
V
IN2
= 0V
V
DIODE
= 5V
V
IN1
= V
IN2
= 0V
V
SENSE
+
= V
SENSE
–
= V
+
DC Supply Current vs V
SENSE
DC Supply Current
vs Temperature
TEMPERATURE (°C)
–50
50
SUPPLY CURRENT (µA)
60
80
90
100
0
140
1473 G02
70
–25 25 50 75 100 125
110
120
130
V
+
= 20V
V
DIODE
= V
IN1
= 5V
V
IN2
= 0V
V
DIODE
= 5V
V
IN1
= V
IN2
= 0V
V
GS
Gate-to-Source ON Voltage
vs Temperature
TEMPERATURE (°C)
–50
5.1
V
GS
GATE-TO-SOURCE ON VOLTAGE (V)
5.2
5.4
5.5
5.6
0
6.0
1473 G04
5.3
–25 25 50 75 100 125
5.7
5.8
5.9
V
+
= V
SAB
=20V
TEMPERATURE (°C)
–50
1.0
SUPPLY VOLTAGE (V)
1.5
2.5
3.0
3.5
0
5.5
1473 G05
2.0
–25 25 50 75 100 125
4.0
4.5
5.0
START-UP
THRESHOLD
SHUTDOWN
THRESHOLD
Undervoltage Lockout Threshold (V
+
)
vs Temperature
Note 4: Gate turn-on and turn-off times are measured with no inrush
current limiting, i.e., V
SENSE
= 0V. Gate rise times are measured from 1V to
4.5V and fall times are measured from 4.5V to 1V. Delay times are
measured from the input transition to when the gate voltage has risen or
fallen to 3V.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formula:
T
J
= T
A
+ (P
D
)(150°C/W)
Note 3: I
S
increases by the same amount as I
BSENSE
+
+ I
BSENSE
–
when
their common mode falls below 5V.
ELECTRICAL CHARACTERISTICS
V
GS
Gate Supply Voltage
vs Temperature
TEMPERATURE (°C)
–50
8.1
V
GS
GATE SUPPLY VOLTAGE (V)
8.2
8.4
8.5
8.6
0
9.0
1473 G03
8.3
–25 25 50 75 100 125
8.7
8.8
8.9
V
+
= 20V
V
GS =
V
GG
– V
+
|V
SENSE
| COMMON MODE(V)
0
SUPPLY CURRENT (µA)
20
1473 • TPC02.5
5
10
15
2.5
7.5
12.5
17.5
500
450
400
350
300
250
200
150
100
V
+
= 20V
V
DIODE
= V
IN1
= 5V
V
IN2
= 0V
V
SENSE
+
– V
SENSE
–
= 0V