Datasheet

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LTC1163/LTC1165

Triple 1.8V to 6V High-Side

MOSFET Drivers

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Operates from 1.8V to 6V

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0.01µA Standby Current

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95µA Operating Current per Channel at 3.3V

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Fully Enhances N-Channel Switches

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No External Charge Pump Components

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Built-In Gate Voltage Clamps

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Easily Protected Against Supply Transients

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Controlled Switching ON and OFF Times

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Compatible with 5V, 3V and Sub-3V Logic Families

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Available in 8-Pin SOIC

ESCRIPTIO

The LTC1163/LTC1165 triple low voltage MOSFET drivers

make it possible to switch supply or ground referenced

loads through inexpensive, low R

DS(ON)

N-channel switches

from as little as a 1.8V supply. The LTC1165 has inverting

inputs and makes it possible to directly replace P-channel

MOSFET switches while maintaining system drive polar-

ity. The LTC1163 has noninverting inputs.

Micropower operation, with 0.01µA standby current and

95µA operating current, coupled with a power supply

range of 1.8V to 6V, make the LTC1163/LTC1165 ideally

suited for 2- to 4-cell battery-powered applications. The

LTC1163/LTC1165 are also well suited for sub-3V, 3.3V

and 5V nominal supply applications.

The LTC1163/LTC1165 internal charge pumps boost the

gate voltage 8V above a 3.3V rail, fully enhancing inexpen-

sive N-channels for high- or low-side switch applications.

The LTC1163/LTC1165 are available in both an 8-pin DIP

and an 8-pin SOIC.

SUPPLY VOLTAGE (V)

GATE OUTPUT VOLTAGE (V)

LTC1163/65 • TA02

IN1

IN2

IN3



LTC1163

LTC1165

OUT1

OUT2

OUT3

GND

CONTROL

LOGIC

OR µP

2-CELL

LOAD

2-CELL

LOAD

2-CELL

LOAD

2-CELL

BATTERY

PACK

10µF

LTC1163/65 • TA01

LTC1163 HAS NONINVERTING INPUTS

LTC1165 HAS INVERTING INPUTS

(1.8V TO 3V)

RFD14N05LSM RFD14N05LSMRFD14N05LSM

MOSFET Switch Gate Voltage2-Cell Triple High-Side Switch

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PCMCIA Card 3.3V/5V Switch

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2-Cell High-Side Load Switching

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Boost Regulator Shutdown to Zero Standby Current

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Replacing P-Channel Switches

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Notebook Computer Power Management

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Palmtop Computer Power Management

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Portable Medical Equipment

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Mixed 3.3V and 5V Supply Switching

ITY

Summary of content (8 pages)

PAGE 1
LTC1163/LTC1165 Triple 1.8V to 6V High-Side MOSFET Drivers U DESCRIPTIO FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Operates from 1.8V to 6V 0.01µA Standby Current 95µA Operating Current per Channel at 3.
PAGE 2
LTC1163/LTC1165 W W W AXI U U ABSOLUTE RATI GS Supply Voltage ......................................................... 7V Any Input Voltage .......................... 7V to (GND – 0.3V) Any Output Voltage ....................... 20V to (GND – 0.3V) Current (Any Pin)................................................. 50mA Operating Temperature Range LTC1163C/LTC1165C ........................... 0°C to 70°C Storage Temperature Range ................ – 65°C to 150°C Lead Temperature (Soldering, 10 sec)..
PAGE 3
LTC1163/LTC1165 ELECTRICAL CHARACTERISTICS VS = 1.8V to 6V, TA = 25°C, unless otherwise noted. LTC1163C/LTC1165C MIN TYP MAX SYMBOL PARAMETER CONDITIONS tOFF Turn-OFF Time VS = 3.3V, CGATE = 1000pF Time for VGATE < 0.5V 20 65 200 µs VS = 5V, CGATE = 1000pF Time for VGATE < 0.5V 15 45 150 µs The ● denotes specifications which apply over the full operating temperature range. Note 1: Quiescent current OFF is for all channels in OFF condition. UNITS Note 2: LTC1163: VOFF = 0V, VON = VS.
PAGE 4
LTC1163/LTC1165 U W TYPICAL PERFOR A CE CHARACTERISTICS Standby Supply Current Supply Current per Driver ON 5 300 4 250 MOSFET Gate Drive Current 1000 3 2 1 0 –1 GATE DRIVE CURRENT (µA) SUPPLY CURRENT (µA) SUPPLY CURRENT (µA) TA = 25°C 200 VS = 5V 150 VS = 3.3V 100 VS = 1.8V 100 VS = 5V 10 VS = 3.3V 1 50 0 10 50 20 30 40 TEMPERATURE (°C) 60 70 0 VS = 1.8V 0 10 20 30 40 50 TEMPERATURE (°C) LTC1163/65 • TPC07 60 70 LTC1163/65 • TPC08 VS = 2.2V 0.
PAGE 5
LTC1163/LTC1165 OPERATIO U Gate Charge Pump Controlled Gate Rise and Fall Times Gate drive for the power MOSFET is produced by an internal charge pump circuit which generates a gate voltage substantially higher than the power supply voltage. The charge pump capacitors are included on chip and therefore no external components are required to generate gate drive. When the input is switched ON and OFF, the gate is charged by the internal charge pump and discharged in a controlled manner.
PAGE 6
LTC1163/LTC1165 W U U U APPLICATIO S I FOR ATIO VIN on a 3.3V supply which is compatible with 5V TTL and CMOS logic. (The LTC1163/LTC1165 cannot however, be driven by 3V logic when powered from a 5V supply because the threshold is approximately 2.5V.) 3.3V LT1129-3.3 + 3.3µF R1 100k VS R2 1k OUT1 MTD3055EL C1 0.1µF 1/3 LTC1163 ON/OFF + IN1 GND CL 100µF 3.3V 3.3V LOAD VS 5V OUT1 1/3 LTC1163 LTC1163/65 • F01 IN1 3.3V LOAD GND Figure 1.
PAGE 7
LTC1163/LTC1165 U TYPICAL APPLICATIO S 2-Cell to 3.3V, 5V and 12V High-Side Switch/Converter with 0.01µA Standby Current + 2-CELL + BATTERY PACK 100µF 6.3V VS CONTROL LOGIC OR µP RFD14N05LSM OUT1 LTC1163 OUT2 LTC1165 OUT3 IN3 GND IN1 IN2 RFD14N05LSM RFD14N05LSM 100µH MBRS120T3 3.3V 22µH 22µH MBRS120T3 1 3 47Ω MBRS120T3 12V 1 5V 3 2 1 3 7 LT1109CS8-12 8 7 + LT1109CS8-5 10µF 20V 4 8 LT1173CS8 + 39k 8 + 22µF 16V 24k 5 4 4 220µF 6.
PAGE 8
LTC1163/LTC1165 UO TYPICAL APPLICATI S Mixed Voltage High- and Low-Side Switches 12V 3.3V 5V + + Si9956DY 10µF + 10µF VS OUT1 LTC1163 OUT2 LTC1165 OUT3 IN3 GND IN1 5V LOGIC OR µP 10µF 12V LOAD IN2 IRFR024 5V LOAD 3.3V LOAD LTC1163/65 • TA07 3-Cell to 3.3V Ultra-Low Drop Regulator with 2 Ramped Switches + + 3-CELL BATTERY PACK 10µF MTD3055EL 1 VS OUT1 IN1 CONTROL LOGIC OR µP 3 510pF LTC1163 OUT2 IN2 LTC1165 OUT3 IN3 GND 3.3k + MTD3055EL 220µF 6.3V 1k 1k LT1431 3.