Datasheet

LTC1154
3
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ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
INL
Input Low Voltage
l
0.8 V
I
IN
Input Current 0V < V
IN
< V
S
l
±1 μA
C
IN
Input Capacitance 5pF
V
ENH
ENABLE Input High Voltage
l
3.5 2.6 V
V
ENL
ENABLE Input Low Voltage
l
1 0.6 V
I
EN
ENABLE Input Current 0V < V
IN
< V
S
l
±1 μA
V
SDH
Shutdown Input High Voltage
l
2V
V
SDL
Shutdown Input Low Voltage
l
0.8 V
I
SD
Shutdown Input Current 0V < V
IN
< V
S
l
±1 μA
V
SEN
Drain Sense Threshold Voltage
l
80
75
100
100
120
125
mV
mV
I
SEN
Drain Sense Input Current 0V < V
SEN
< V
S
l
±0.1 μA
V
GATE
– V
S
Gate Voltage Above Supply V
S
= 5V
V
S
= 6V
V
S
= 12V
l
l
l
6
7.5
15
7
8.3
18
9
15
25
V
V
V
V
STAT
Status Output Low Voltage I
STAT
= 400μA
l
0.05 0.4 V
I
STAT
Status Output Leakage Current V
STAT
= 12V
l
1μA
t
ON
Turn-ON Time V
S
= 5V, C
GATE
= 1000pF
Time for V
GATE
> V
S
+ 2V
Time for V
GATE
> V
S
+ 5V
30
100
110
450
300
1000
μs
μs
V
S
= 12V, C
GATE
= 1000pF
Time for V
GATE
> V
S
+ 5V
Time for V
GATE
> V
S
+ 10V
20
50
80
160
200
500
μs
μs
t
OFF
Turn-OFF Time V
S
= 5V, C
GATE
= 1000pF, Time for V
GATE
< 1V 10 36 60 μs
V
S
= 12V, C
GATE
= 1000pF, Time for V
GATE
< 1V 10 28 60 μs
t
SC
Short-Circuit Turn-OFF Time V
S
= 5V, C
GATE
= 1000pF, Time for V
GATE
< 1V 5 25 40 μs
V
S
= 12V, C
GATE
= 1000pF, Time for V
GATE
< 1V 5 23 40 μs
t
SD
Shutdown Turn-OFF Time V
S
= 5V, C
GATE
= 1000pF, Time for V
GATE
< 1V 17 40 μs
V
S
= 12V, C
GATE
= 1000pF, Time for V
GATE
< 1V 13 35 μs
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
S
= 4.5V to 18V, T
A
= 25°C, V
EN
= 0V, V
SD
= 0V unless otherwise noted.