Datasheet

LT8609/LT8609A/LT8609B
3
Rev. H
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ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C.
PARAMETER CONDITIONS MIN TYP MAX UNITS
Minimum Input Voltage
l
2.7
3.0
3.2
V
V
IN
Quiescent Current LT8609/LT8609A:
V
EN/UV
= 0V, V
SYNC
= 0V
V
EN/UV
= 2V, Not Switching, V
SYNC
= 0V
l
1
1.7
4
12
µA
µA
LT8609B:
V
EN/UV
= 0V
V
EN/UV
= 2V, Not Switching
1
350
4 µA
µA
V
IN
Current in Regulation LT8609/LT8609A:
V
IN
= 6V, V
OUT
= 2.7V, Output Load = 100µA
V
IN
= 6V, V
OUT
= 2.7V, Output Load = 1mA
l
l
46
480
90
700
µA
µA
Feedback Reference Voltage LT8609/LT8609A:
V
IN
= 6V, I
LOAD
= 100mA
V
IN
= 6V, I
LOAD
= 100mA
l
0.778
0.770
0.782
0.782
0.786
0.794
V
V
LT8609B:
V
IN
= 6V, I
LOAD
= 100mA
V
IN
= 6V, I
LOAD
= 100mA
l
0.772
0.759
0.782
0.782
0.792
0.805
V
V
Feedback Voltage Line Regulation V
IN
= 4.0V to 40V
l
0.02 0.04 %/V
Feedback Pin Input Current V
FB
= 1V
l
±20 nA
Minimum On-Time I
LOAD
= 1.5A, SYNC = 0V
I
LOAD
= 1.5A, SYNC = 1.9V
l
l
45
45
75
60
ns
ns
Minimum Off Time 90 130 ns
Oscillator Frequency LT8609/LT8609A:
R
T
= 221k, I
LOAD
= 0.5A
R
T
= 60.4k, I
LOAD
= 0.5A
R
T
= 18.2k, I
LOAD
= 0.5A
l
l
l
155
640
1.925
200
700
2.00
245
760
2.075
kHz
kHz
MHz
LT8609B:
R
T
= 18.2k, I
LOAD
= 0.5A
l
1.875 2.00 2.125 MHz
Top Power NMOS On-Resistance I
LOAD
= 1A 185 mΩ
Top Power NMOS Current Limit
l
3.4 4.5 5.7 A
Bottom Power NMOS On-Resistance 115 mΩ
SW Leakage Current V
IN
= 42V, V
SW
= 40V
l
15 µA
EN/UV Pin Threshold EN/UV Rising
l
0.99 1.05 1.11 V
EN/UV Pin Hysteresis 50 mV
EN/UV Pin Current LT8609/LT8609A:
V
EN/UV
= 2V
l
±20 nA
LT8609B:
V
EN/UV
= 2V
l
±30 nA
PG Upper Threshold Offset from V
FB
LT8609/LT8609A:
V
FB
Rising
l
5.0 8.5 13.0 %
LT8609B:
V
FB
Rising
l
4.0 8.5 14.0 %
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