Datasheet

LT6552
6
6552f
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Shutdown Pin Current V
SHDN
= –4.5V ● 85 250 µA
V
SHDN
= 4.7V ● 310 µA
t
ON
Turn-On Time V
SHDN
from –4.5V to 4.7V 200 ns
t
OFF
Turn-Off Time V
SHDN
from 4.7V to –4.5V 400 ns
Shutdown Output Leakage Current V
SHDN
= –4.5V, V
–
≤ V
OUT
≤ V
+
● 0.25 µA
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
S
= ±5V. Figure 2 shows the DC test circuit, V
REF
= V
CM
= 0V,
V
DIFF
= 0V, V
SHDN
= V
+
, unless otherwise noted. R
L
= R
F
+ R
G
= 1k. (Note 6)
±5V ELECTRICAL CHARACTERISTICS
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: The inputs are protected from ESD with diodes to the supplies.
Note 3: A heat sink may be required to keep the junction temperature
below absolute maximum.
Note 4: The LT6552C/LT6552I are guaranteed functional over the
temperature range of –40°C to 85°C.
Note 5: The LT6552C is guaranteed to meet specified performance from
0°C to 70°C and is designed, characterized and expected to meet specified
performance from –40°C to 85°C, but is not tested or QA sampled at these
temperatures. The LT6552I is guaranteed to meet specified performance
from – 40°C to 85°C.
Note 6: When R
L
= 1k is specified, the load resistor is R
F
+ R
G
, but when
R
L
= 150Ω or R
L
= 75Ω is specified, then an additional resistor of that
value is added to the output.
Note 7: V
OS
measured at the output (Pin 6) is the contribution from both
input pairs and is input referred.
Note 8: Minimum supply is guaranteed by the PSRR test.
Note 9: Full power bandwidth is calculated from the slew rate.
FPBW = SR/2πVp
Note 10: V
S
= 3.3V, t
r
and t
f
limits are guaranteed by correlation to
V
S
= 5V and ±5V tests.
Figure 1. 3.3V, 5V DC Test Circuit Figure 2. ±5V DC Test Circuit
REF
–IN
+IN
V
–
FB
V
+
OUT
SHDN
+
–
+
–
–
+
+
–
+
–
V
DIFF
V
REF
V
CM
V
SHDN
V
+
R
G
100Ω
0.1%
R
F
900Ω
0.1%
R
L
6552 F01
1µF
REF
–IN
+IN
V
–
FB
V
+
OUT
SHDN
+
–
+
–
+
–
+
–
+
–
V
DIFF
V
CM
V
SHDN
V
+
V
–
R
G
100Ω
0.1%
R
F
900Ω
0.1%
R
L
6552 F02
1µF
1µF