Datasheet

LT6552
4
6552f
5V ELECTRICAL CHARACTERISTICS
The denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
S
= 5V, 0V; Figure 1 shows the DC test circuit,
V
REF
= V
CM
= 1V, V
DIFF
= 0V, V
SHDN
= V
+
, unless otherwise noted. R
L
= R
F
+ R
G
= 1k. (Note 6)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
Input Offset Voltage Both Inputs (Note 7) 5 20 mV
25 mV
V
OS
/T Input V
OS
Drift 40 µV/°C
I
B
Input Bias Current Any Input 20 50 uA
I
OS
Input Offset Current Either Input Pair 15 uA
e
n
Input Noise Voltage Density f = 10kHz 55 nV/Hz
i
n
Input Noise Current Density f = 10kHz 0.7 pA/Hz
R
IN
Input Resistance Common Mode, V
CM
= 0V to 3V 300 k
CMRR Common Mode Rejection Ratio V
CM
= 0V to 3V 58 83 dB
Input Range 03V
PSRR Power Supply Rejection V
S
= 3V to 12V 48 54 dB
Minimum Supply (Note 8) 3V
G
E
Gain Error V
O
= 0.5V to 3.5V, R
L
= 1k 13 %
R
L
= 150 13 %
V
OH
Swing High (V
DIFF
= 0.6V), V
REF
(Pin 1) = 0V, A
V
= 10
R
L
= 1k 4.8 4.875 V
R
L
= 150 3.6 4.3 V
R
L
= 75, 0°C T
A
70°C (Only) 2.75 3.4 V
V
OL
Swing Low (V
DIFF
= –0.1V), V
REF
(Pin 1) = 0V, A
V
= 10
R
L
= 1k 850 mV
I
SINK
= 5mA 65 120 mV
I
SINK
= 10mA 110 200 mV
SR Slew Rate V
OUT
= 0.5V to 3.5V
Measure from 1V to 3V, R
L
= 150, A
V
= 2 450 V/µs
FPBW Full-Power Bandwidth (Note 9) V
O
= 2V
P-P
70 MHz
BW Small-Signal –3dB Bandwidth A
V
= 2, R
L
= 150 70 MHz
t
r
, t
f
Rise Time, Fall Time 5V, 0V; A
V
= 50, V
O
= 0.5V to 3.5V, 125 175 ns
20% to 80%, R
L
= 1k
t
S
Settling Time to 3% A
V
= 2, V
OUT
= 2V, Positive Step 20 ns
Settling Time to 1% R
L
= 150 30 ns
Differential Gain A
V
= 2, R
L
= 150, Output Black Level = 1V 0.25 %
Differential Phase A
V
= 2, R
L
= 150, Output Black Level = 1V 0.04 Deg
I
SC
Short-Circuit Current V
OUT
= 0V, V
DIFF
= 1V 50 70 mA
0°C T
A
70°C 45 mA
–40°C T
A
85°C 35 mA
I
S
Supply Current 13.5 14.5 mA
16 mA
Supply Current Shutdown V
SHDN
= 0.5V 400 900 µA
V
L
Shutdown Pin Input Low Voltage 0.5 V
V
H
Shutdown Pin Input High Voltage 4.7 V
Shutdown Pin Current V
SHDN
= 0.5V 60 200 µA
V
SHDN
= 4.7V 410 µA