Datasheet

LT4351
3
4351fd
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
IN
= V
OUT
= 5V, V
DD
= 16.1V, V
UV
= 0.4V, V
OV
= 0.2V, GATE Open, unless
otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
I
OV
OV Input Bias Current V
OV
= V
OV(TH)
– 10mV
l
–100 –400 V
V
F(ON)
FAULT Pin On-Voltage I
F
= 5mA in Fault Condition
l
0.14 0.25 V
I
F(OFF)
FAULT Pin Leakage Current V
F
= 30V, V
IN
= 4.9V
l
0.04 1 µA
Boost Supply
V
BR
Boost Regulation Trip Voltage Measured as V
DD
to V
IN
, Rising Edge
l
10.2 10.7 11.4 V
t
OFF
Boost Supply Off-Time 600 ns
I
SWLIM
Boost Supply Switch Current Limit
l
350 450 650 mA
Gate Drive
V
IOR
Input-to-Output Regulated Voltage
l
4 15 25 mV
∆V
GL
Gate Voltage Limit V
IN
= 5V, V
OUT
= 4.9V, V
DD
= 13V Measured with
Respect to V
DD
l
–2.3 –3 V
∆V
G(MAX)
Maximum Gate Voltage V
IN
= 5V, V
OUT
= 4.9V, V
DD
= 16.1V Measured with
Respect to V
OUT
l
7 7.4 7.8 V
V
G(OFF)
Gate Off-Voltage V
OUT
= 5.1V
l
0.16 0.30 V
I
GSO
Gate Source Current V
OUT
= 4.9V, V
GATE
= 9V 0.670 A
I
GSK
Gate Sink Current V
OUT
= 5.1V, V
GATE
= 9V 0.670 A
V
DD
Operating Range
l
30 V
I
VDD
V
DD
Supply Current V
IN
= 1.2V, V
OUT
= 1.1V, V
DD
= 12.3V, GATE Open
V
IN
= 18V, V
OUT
= 17.9V, V
DD
= 29.1V, GATE Open
l
l
3
3.6
4
5.6
mA
mA
Status Functions
∆V
GIS
Minimum Gate Voltage for Turning
On Status
V
OUT
= 4.9V, I
STATUS
= 1mA
l
0.75 1 V
V
IOGF
V
IN
to V
OUT
Fault Voltage with
Open Gate
V
OUT
Falling, Measured with Respect to V
IN
185 210 230 mV
V
ST(ON)
Status Pin On-Voltage I
ST
= 5mA, V
OUT
= 4.9V, Status On
l
0.13 0.25 V
I
ST(OFF)
Status Pin Leakage Current V
ST
= 30V, Status Off, V
IN
= 4.9V
l
0.04 1 µA
Note 2: T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formula:
T
J
= T
A
+ (P
D
• 120°C/W)