Datasheet

LT3782A
4
3782afb
V
CC
(V)
6
I
CC
(mA)
20
18
16
12
14
10
8
6
4
2
0
22
3782A G02
108 121620 26
14
18
30
24
28
V
CC
(V)
6
∆V
REF
(mV)
30
3782A G03
12
18
24
27
9
15
21
3
2
1
0
–1
–2
–3
–4
–5
∆FREQUENCY (kHz)
12
10
8
6
4
2
0
–2
–4
∆FREQUENCY
∆V
REF
I
GBIAS
(mA)
0
V
GBIAS
(V)
10.5
100
3782A G01
10.0
10.6
10.1
10.7
10.2
10.8
10.3
10.9
10.4
50
11.0
The l denotes the specifi cations which apply over the full operating junction
temperature range, otherwise specifi cations are at T
J
= 25°C. V
CC
= 13V, R
SET
= 80k, no load on any outputs, unless otherwise noted.
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LT3782AE is guaranteed to meet performance specifi cations
from 0°C to 85°C operating junction temperature. Specifi cations over
the –40°C to 125°C operating junction temperature range are assured by
design, characterization and correlation with statistical process controls.
The LT3782AI is guaranteed to meet performance specifi cations over the
full –40°C to 125°C operating junction temperature range. The maximum
ambient temperature is determined by specifi c operating conditions in
conjunction with board layout, the rated package thermal resistance and
other environmental factors.
Note 3: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specifi ed maximum operating junction
temperature may impair device reliability.
V
GBIAS
vs I
GBIAS
I
CC
vs V
CC
ΔV
REF
vs V
CC
, ΔFrequency vs V
CC
(R
SET
= 80k)
ELECTRICAL CHARACTERISTICS
PARAMETER CONDITIONS MIN TYP MAX UNITS
Gate Driver
V
GBIAS
I
GBIAS
< 70mA
l
10.2 11 11.7 V
BGATE1, BGATE2 High Voltage 13V ≤ V
CC
≤ 24V, I
BGATE
= –100mA
V
CC
= 8V, I
BGATE
= –100mA
l
l
7.8
3.8
9.2
5
10.5 V
V
BGATE1, BGATE2 Source Current (Peak) Capacitive Load >22µF
Capacitive Load >50µF
3
4
A
A
BGATE1, BGATE2 Low Voltage 8V ≤ V
CC
≤ 24V, I
BGATE
= 100mA
l
0.5 0.7 V
BGATE1, BGATE2 Sink Current (Peak) Capacitive Load >22µF
Capacitive Load >50µF
3
4
A
A
SGATE1, SGATE2 High Voltage 8V ≤ V
CC
≤ 24V, I
SGATE
= –20mA
l
4.5 5.5 6.7 V
SGATE1, SGATE2 Low Voltage 8V ≤ V
CC
≤ 24V, I
SGATE
= 20mA 0.5 0.7 V
SGATE1, SGATE2 Peak Current 500pF Load 100 mA
Delay of BGATE High DELAY Pin and R
SET
Pin Shorted
V
DELAY
= 1V
V
DELAY
= 0.5V
V
DELAY
= 0.25V
100
150
250
500
ns
ns
ns
ns
Delay Pin Input Current V
DELAY
= 0.25V
l
–0.1 –0.3 µA
T
J
= 25°C unless otherwise noted.
TYPICAL PERFORMANCE CHARACTERISTICS