Datasheet
LT3758/LT3758A
25
3758afd
ApplicAtions inForMAtion
Check the stress on the power MOSFET by measuring its
drain-to-source voltage directly across the device terminals
(reference the ground of a single scope probe directly to
the source pad on the PC board). Beware of inductive
ringing, which can exceed the maximum specified voltage
rating of the MOSFET. If this ringing cannot be avoided,
and exceeds the maximum rating of the device, either
choose a higher voltage device or specify an avalanche-
rated power MOSFET.
The small-signal components should be placed away
from high frequency switching nodes. For optimum load
regulation and true remote sensing, the top of the output
voltage sensing resistor divider should connect indepen-
dently to the top of the output capacitor (Kelvin connec-
tion), staying away from any high dV/dt traces. Place the
divider resistors near the LT3758 in order to keep the high
impedance FBX node short.
Figure 11 shows the suggested layout of the 10V to 40V
input, 48V output boost converter in the Typical Applica-
tions section.
Figure 11. Suggested Layout of the 10V to 40V Input, 48V Output
Boost Converter in the Typical Applications Section
V
IN
3758 F11
V
OUT
L1
VIAS TO GROUND
PLANE
D1
C
OUT1
C
OUT2
1
2
8
7
3
4
6
5
M1
C
IN
R
C
R1
R2
C
SS
R
T
R3
R4
C
VCC
C
C1
C
C2
LT3758
1
2
3
4
5
9
10
6
7
8
R
S
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