Datasheet

LT1970
4
1970fc
ELECTRICAL CHARACTERISTICS
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. See Test Circuit for standard test conditions.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Current Sense Bandwidth 2 MHz
R
CSF
Resistance FILTER to SENSE
–
l
750 1000 1250 Ω
Logic I/O Characteristics
Logic Output Leakage ISRC, ISNK, TSD V = 15V
l
1µA
Logic Low Output Level I = 5mA (Note 6)
l
0.2 0.4 V
Logic Output Current Limit 25 mA
V
ENABLE
Enable Logic Threshold
l
0.8 1.9 2.5 V
I
ENABLE
Enable Pin Bias Current
l
–1 1 µA
I
SUPPLY
Total Supply Current V
CC
, V
+
and V
–
, V
EE
Connected
l
713 mA
I
CC
V
CC
Supply Current V
CC
, V
+
and V
–
, V
EE
Separate
l
37 mA
I
CC(STBY)
Supply Current Disabled V
CC
, V
+
and V
–
, V
EE
Connected, V
ENABLE
≤ 0.8V
l
0.6 1.5 mA
t
ON
Turn-On Delay (Note 7) 10 µs
t
OFF
Turn-Off Delay (Note 7) 10 µs
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device reli-
ability and lifetime.
Note 2: The LT1970C is guaranteed functional over the operating tempera-
ture range of –40°C and 85°C.
Note 3: The LT1970C is guaranteed to meet specifi ed performance from
0°C to 70°C. The LT1970C is designed, characterized and expected to
meet specifi ed performance from –40°C to 85°C but is not tested or QA
sampled at these temperatures. The LT1970I is guaranteed to meet speci-
fi ed performance from –40°C to 85°C.
Note 4: This parameter is not 100% tested.
Note 5: Full power bandwidth is calculated from slew rate measurements:
FPBW = SR/(2 • π • V
P
)
Note 6: The logic low output level of pin TSD is guaranteed by correlating
the output level of pin ISRC and pin ISNK over temperature.
Note 7: Turn-on and turn-off delay are measured from V
ENABLE
crossing
1.6V to the OUT pin at 90% of normal output voltage.
Note 8: Thermal resistance varies depending upon the amount of PC board
metal attached to the device. If the maximum dissipation of the package is
exceeded, the device will go into thermal shutdown and be protected.
Warm-Up Drift V
IO
vs Time Input Bias Current vs V
CM
Total Supply Current
vs Supply Voltage
TYPICAL PERFORMANCE CHARACTERISTICS
TIME (100ms/DIV)
1970 G01
0V
V
OS
• 1000 (50mV/DIV)
COMMON MODE INPUT VOLTAGE (V)
–15 –12 –9 –6 –3 0 3 6 9 12 15
INPUT BIAS CURRENT (nA)
–100
–120
–140
–160
–180
–200
–220
–240
–260
1970 G02
V
S
= ±15V
–I
BIAS
+I
BIAS
SUPPLY VOLTAGE (±V)
0
–14
TOTAL SUPPLY CURRENT (mA)
–10
–6
–2
14
6
4
8
10 18
1970 G03
10
2
–12
–8
–4
12
4
8
0
26
12
14
16
I
CC
+ I
V
+
I
EE
+ I
V
–
25°C
25°C
–55°C
–55°C
125°C
125°C