Datasheet

LT1950
5
1950fa
TEMPERATURE (°C)
–50
SHDN CURRENT HYSTERESIS (µA)
100
1950 G11
050
11
10
9
8
7
6
5
4
3
–25 25 75 125
GATE CAPACITANCE (pF)
0
GATE RISE/FALL TIME (ns)
125
100
75
50
25
0
4000
1950 G12
1000
2000
3000
5000
t
r
t
f
TEMPERATURE (°C)
–50
MINIMUM V
IN
START-UP VOLTAGE (V)
100
1950 G08
050
3.00
2.75
2.50
2.25
2.00
–25 25 75 125
TEMPERATURE (°C)
–50
BLANK OVERRIDE THRESHOLD
–I
SENSE
MAXIMUM THRESHOLD (mV)
40
35
30
25
20
15
10
25 75
1950 G07
–25 0
50 100 125
TEMPERATURE (°C)
–50
V
IN
I
Q
(mA)
100
1950 G09
050
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
–25 25 75 125
14
12
10
8
6
4
2
0
SHDN INPUT CURRENT*(–1) (µA)
TEMPERATURE (°C)
–50 25 75
1950 G10
–25 0
50 100 125
SHDN = SHDN THRESHOLD + 70mV
SHDN = SHDN THRESHOLD – 100mV
V
IN2
GATE ENABLE (V)
9.2
8.7
8.2
7.7
7.2
TEMPERATURE (°C)
–50 25 75
1950 G13
–25 0
50 100 125
GATE DISABLE
GATE ENABLE
HYSTERESIS
TEMPERATURE (°C)
–50
V
IN2
BOOST DISABLE (V)
1950 G14
0
50
100
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
–25 25 75
125
BOOST DISABLE
BOOST RE-ENABLE
HYSTERESIS
BOOST SWITCH I
LIMIT
(mA)
250
200
150
100
50
TEMPERATURE (°C)
–50 25 75
1950 G15
–25 0
50 100 125
T
A
= 25°C
BLANK Override Threshold –
I
SENSE
Maximum Threshold vs
Temperature
Minimum V
IN
Start-Up Voltage vs
Temperature (V
IN2
Boosted)
V
IN
I
Q
vs Temperature
SHDN Input Current *(–1) vs
Temperature
SHDN Current Hysteresis vs
Temperature
GATE Rise/Fall Time vs
GATE Capacitance
V
IN2
: BOOST Disable
vs Temperature
BOOST Switch I
LIMIT
vs
Temperature
V
IN2
: GATE Enable
vs Temperature
TYPICAL PERFOR A CE CHARACTERISTICS
UW