Datasheet

LT1789-1/LT1789-10
7
1789fc
SYMBOL PARAMETER CONDITIONS
LT1789-1 LT1789-10
UNITSMIN TYP MAX MIN TYP MAX
BW Bandwidth G = 1
G = 10
G = 100
G = 1000
60
30
3
0.2
25
12
1.5
kHz
kHz
kHz
kHz
SR Slew Rate V
OUT
= ±10V 0.012 0.026 0.028 0.066 V/μs
Settling Time to 0.01% 10V Step 460 270 μs
R
REFIN
Reference Input Resistance 220 220 kΩ
I
REFIN
Reference Input Current V
REF
= 0V 2.7 2.7 μA
AV
REF
Reference Gain to Output 1 ±0.0001 1 ±0.0001
ELECTRICAL CHARACTERISTICS
V
S
= ±15V, R
L
= 20k, V
CM
= V
OUT
= 0V, T
A
= 25°C, unless otherwise noted.
The l denotes the specifications which apply over the temperature range of 0°C ≤ T
A
≤ 70°C. V
S
= ±15V, R
L
= 20k, V
CM
= V
REF
= 0V,
unless otherwise noted. (Note 4)
SYMBOL PARAMETER CONDITIONS
LT1789-1 LT1789-10
UNITSMIN TYP MAX MIN TYP MAX
Gain Error V
O
= ±10V
G = 1
G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)
l
l
l
l
0.15
0.38
0.38
0.43
0.20
0.43
0.48
%
%
%
%
Gain Nonlinearity V
O
= ±10V
G = 1
G = 10
G = 100
G = 1000
l
l
l
l
25
15
25
120
45
45
180
ppm
ppm
ppm
ppm
G/T Gain vs Temperature G < 1000 (Notes 2, 3)
l
5 50 5 50 ppm/°C
V
OST
Total Input Referred Offset Voltage V
OST
= V
OSI
+ V
OSO
/G
V
OSI
Input Offset Voltage G = 1000
l
285
325
µV
V
OSIH
Input Offset Voltage Hysteresis (Notes 3, 5)
l
8 30 8 30 µV
V
OSO
Output Offset Voltage G = 1
l
1.2 4 mV
V
OSOH
Output Offset Voltage Hysteresis (Notes 3, 5)
l
50 120 400 1000 µV
V
OSI
/T Input Offset Voltage Drift (RTI) (Note 3)
l
0.2 0.7 0.3 0.8 µV/°C
V
OSO
/T Output Offset Voltage Drift (Note 3)
l
1.5
5 8 22 µV/°C
I
OS
Input Offset Current
l
4.5 4.5 nA
I
OS
/T Input Offset Current Drift
l
2 2 pA/°C
I
B
Input Bias Current
l
45 45 nA
I
B
/T Input Bias Current Drift
l
35 35
pA/°C
V
CM
Input Voltage Range G = 1, Other Input Grounded
l
–14.8 14 –14.8 14 V
CMRR Common Mode Rejection Ratio
1k Source Imbalance,
V
CM
= –14.8V to 14V
G = 1
G = 10
G = 100, 1000
l
l
l
78
96
100
91
100
dB
dB
dB