Datasheet

LT1336
3
1336fa
elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. Test Circuit, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V and Pins 1, 16 open. Gate
Feedback pins connected to Gate Drive pins unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
I
S
DC Supply Current (Note 3) V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 2V
V
+
= 15V, V
INTOP
= 2V, V
INBOTTOM
= 0.8V
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 0.8V
V
+
= 15V, V
TSOURCE
= 40V, V
INTOP
= V
INBOTTOM
=
0.8V (Note 4)
12
12
12
15
14
15
30
20
20
20
40
mA
mA
mA
mA
I
BOOST
Boost Current (Note 3) V
+
= 15V, V
TSOURCE
= 60V, V
BOOST
= 75V,
V
INTOP
= V
INBOTTOM
= 0.8V
3 5 7 mA
V
IL
Input Logic Low
l
1.4 0.8 V
V
IH
Input Logic High
l
2 1.7 V
I
IN
Input Current V
INTOP
= V
INBOTTOM
= 4V
l
7 25 µA
V
+
UVH
V
+
Undervoltage Start-Up Threshold 8.4 9.2 9.75 V
V
+
UVL
V
+
Undervoltage Shutdown Threshold 7.8 8.3 8.9 V
V
BUVH
V
BOOST
Undervoltage Start-Up Threshold V
TSOURCE
= 60V, V
BOOST
– V
TSOURCE
8.8 9.3 9.8 V
V
BUVL
V
BOOST
Undervoltage Shutdown Threshold V
TSOURCE
= 60V, V
BOOST
– V
TSOURCE
8.2 8.7 9.2 V
I
UVOUT
Undervoltage Output Leakage V
+
= 15V
l
0.1 5 µA
V
UVOUT
Undervoltage Output Saturation V
+
= 7.5V, I
UVOUT
= 2.5mA
l
0.2 0.4 V
V
OH
Top Gate ON Voltage V
INTOP
= 2V, V
INBOTTOM
= 0.8V,
V
TGATE DR
– V
TSOURCE
l
11 11.3 12 V
Bottom Gate ON Voltage V
INTOP
= 0.8V, V
INBOTTOM
= 2V, V
BGATE DR
l
11 11.3 12 V
V
OL
Top Gate OFF Voltage V
INTOP
= 0.8V, V
INBOTTOM
= 2V,
V
TGATE DR
– V
TSOURCE
l
0.4 0.7 V
Bottom Gate OFF Voltage V
INTOP
= 2V, V
INBOTTOM
= 0.8V, V
BGATE DR
l
0.4 0.7 V
V
IS
I
SENSE
Peak Current Threshold V
TSOURCE
= 60V, V
BOOST
= 68V, V
+
– V
ISENSE
310 480 650 mV
V
ISHYS
I
SENSE
Hysteresis V
TSOURCE
= 60V, V
BOOST
= 68V 25 55 85 mV
V
SAT
Switch Saturation Voltage V
ISENSE
= V
+
, V
BOOST
– V
TSOURCE
= 9V,
I
SW
= 100mA
l
0.85 1.2 V
V
BOUT
V
BOOST
Regulated Output V
TSOURCE
= 40V, V
INTOP
= V
INBOTTOM
= 0.8V,
I
BOOST
= 10mA, V
BOOST
– V
TSOURCE
10 10.6 11.2 V
t
r
Top Gate Rise Time V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
– V
TSOURCE
(Note 5)
l
130 200 ns
Bottom Gate Rise Time V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
l
90 200 ns
t
f
Top Gate Fall Time V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
– V
TSOURCE
(Note 5)
l
60 140 ns
Bottom Gate Fall Time V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
l
60 140 ns
t
D1
Top Gate Turn-On Delay V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
– V
TSOURCE
(Note 5)
l
250 500 ns
Bottom Gate Turn-On Delay V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
l
200 400 ns
t
D2
Top Gate Turn-Off Delay V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
– V
TSOURCE
(Note 5)
l
300 600 ns
Bottom Gate Turn-Off Delay V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 5)
l
200 400 ns