Datasheet

7
LT1113
1113fb
FREQUENCY (Hz)
0.01
VOLTAGE GAIN (dB)
180
140
100
60
20
–20
1M
1113 G10
1
100
10k
100M
T
A
= 25°C
V
S
= ±15V
FREQUENCY (MHz)
0.1
VOLTAGE GAIN (dB)
50
40
30
20
10
0
–10
1 10 100
1113 G12
T
A
= 25°C
V
S
= ±15V
C
L
= 10pF
60
80
100
120
140
160
180
PHASE
GAIN
PHASE SHIFT (DEG)
5V/DIV
20mV/DIV
Voltage Gain vs Frequency
CHIP TEMPERATURE (°C)
–75
10
9
8
7
6
5
4
3
2
1
0
–25
50
75
1113 G11
–50 25
100
125
0
V
S
= ±15V
V
O
= ±10V, R
L
= 1k
V
O
= ±12V, R
L
= 10k
VOLTAGE GAIN (V/µV)
R
L
=10k
R
L
= 1k
Voltage Gain vs
Chip Temperature
Gain and Phase Shift vs
Frequency
1µs/DIV
A
V
= 1
C
L
= 10pF
V
S
= ±15V, ±5V
1113 G13
Small-Signal Transient Response
2µs/DIV
A
V
= 1
C
L
= 10pF
V
S
= ±15V
1113 G14
Large-Signal Transient Response
SUPPLY VOLTAGE (V)
0
SUPPLY CURRENT PER AMPLIFIER (mA)
±20
1113 G15
±5
±10
±15
6
5
4
25°C
–55°C
125°C
Supply Current vs Supply Voltage
Output Voltage Swing vs
Load Current Capacitive Load Handling
Slew Rate and Gain Bandwidth
Product vs Temperature
CCHARA TERIST
ICS
UW
AT
Y
P
I
CA
LPER
F
O
R
C
E
OUTPUT CURRENT (mA)
–10
OUTPUT VOLTAGE SWING (V)
V
+
–0.8
–1.0
–1.2
–1.4
–1.6
1.4
1.2
1.0
0.8
0.6
V
–
+0.4
6
1113 G16
–8
–2
2
10
–6 –4
048
25°C
–55°C
125°C
–55°C
25°C
125°C
V
S
= ±5V TO ±20V
I
SINK
I
SOURCE
CAPACITIVE LOAD (pF)
0.1
OVERSHOOT (%)
50
40
30
20
10
0
1000
1113 G17
1
10
100
10000
V
S
= ±15V
T
A
= 25°C
R
L
≥ 10k
V
O
= 100mV
P-P
A
V
= +10, R
F
= 10k, C
F
= 20pF
A
V
= 1
A
V
= 10
TEMPERATURE (°C)
–75
6
5
4
3
2
1
0
–25
50
75
1113 G18
–50 25
100
125
0
SLEW RATE (V/µs)
SLEW RATE
GBW
12
10
8
6
4
2
0
GAIN BANDWIDTH PRODUCT (f
O
= 100kHz)(MHz)