Datasheet

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LT1113

1113fb

The LT

1113 achieves a new standard of excellence in noise

performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz

noise combined with low current noise and picoampere

bias currents makes the LT1113 an ideal choice for ampli-

fying low level signals from high impedance capacitive

transducers.

The LT1113 is unconditionally stable for gains of 1 or more,

even with load capacitances up to 1000pF. Other key fea-

tures are 0.4mV V

and a voltage gain of 4 million. Each

individual amplifier is 100% tested for voltage noise, slew

rate and gain bandwidth.

The design of the LT1113 has been optimized to achieve

true precision performance with an industry standard

pinout in the S0-8 package. A set of specifications are

provided for ±5V supplies and a full set of matching speci-

fications are provided to facilitate the use of the LT1113 in

matching dependent applications such as instrumenta-

tion amplifier front ends.

Dual Low Noise,

Precision, JFET Input Op Amp

■

100% Tested Low Voltage Noise: 6nV/√Hz Max

■

SO-8 Package Standard Pinout

■

Voltage Gain: 1.2 Million Min

■

Offset Voltage: 1.5mV Max

■

Offset Voltage Drift: 15µV/°C Max

■

Input Bias Current, Warmed Up: 450pA Max

■

Gain Bandwidth Product: 5.6MHz Typ

■

Guaranteed Specifications with ±5V Supplies

■

Guaranteed Matching Specifications

■

Photocurrent Amplifiers

■

Hydrophone Amplifiers

■

High Sensitivity Piezoelectric Accelerometers

■

Low Voltage and Current Noise Instrumentation

Amplifier Front Ends

■

Two and Three Op Amp Instrumentation Amplifiers

■

Active Filters

Low Noise Hydrophone Amplifier with DC Servo

1kHz Input Noise Voltage Distribution

FEATURES

DESCRIPTIO

APPLICATIO S

TYPICAL APPLICATIO

, LTC and LT are registered trademarks of Linear Technology Corporation.

–

5V TO 15V

–5V TO –15V

0.47µF

100M

100k

1/2

LT1113

1/2

LT1113

3.9k

C1*

R1*

100M

200Ω

HYDRO-

PHONE

OUTPUT

DC OUTPUT ≤ 2.5mV FOR T

< 70°C

OUTPUT VOLTAGE NOISE = 128nV/√Hz AT 1kHz (GAIN = 20)

C1 ≈ C

≈ 100pF TO 5000pF; R4C2 > R8C

; *OPTIONAL

1113 TA01

INPUT VOLTAGE NOISE (nV/√Hz)

3.8

PERCENT OF UNITS (%)

4.2

4.6

4.8 5.8

1113 TA02

4.0 4.4

5.0

5.2

5.4

5.6

= ±15V

= 25°C

138 S8

276 OP AMPS TESTED

Summary of content (16 pages)

PAGE 1
LT1113 Dual Low Noise, Precision, JFET Input Op Amp U FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT®1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined with low current noise and picoampere bias currents makes the LT1113 an ideal choice for amplifying low level signals from high impedance capacitive transducers. 100% Tested Low Voltage Noise: 6nV/√Hz Max SO-8 Package Standard Pinout Voltage Gain: 1.2 Million Min Offset Voltage: 1.
PAGE 2
LT1113 W W W AXI U U ABSOLUTE RATI GS (Note 1) Supply Voltage –55°C to 105°C ............................................... ± 20V 105°C to 125°C ............................................... ± 16V Differential Input Voltage ...................................... ± 40V Input Voltage (Equal to Supply Voltage) ............... ± 20V Output Short Circuit Duration .......................... 1 Minute Storage Temperature Range ................
PAGE 3
LT1113 ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN PSRR Power Supply Rejection Ratio VS = ± 4.5V to ± 20V 86 AVOL Large-Signal Voltage Gain VO = ±12V, RL = 10k VO = ±10V, RL = 1k LT1113AM/AC TYP MAX MIN LT1113M/C TYP MAX 98 UNITS 100 83 dB 1200 4800 1000 4500 V/mV 600 4000 500 3000 V/mV ±13.5 ±12.0 ±13.8 ±13.0 ±13.0 ±11.5 ±13.8 ±13.
PAGE 4
LT1113 ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the temperature range –40°C ≤ TA ≤ 85°C. VS = ±15V, VCM = 0V, unless otherwise noted. (Note 10) SYMBOL PARAMETER VOS Input Offset Voltage ∆VOS ∆Temp CONDITIONS (Note 4) MIN LT1113AC TYP MAX MIN LT1113C TYP MAX UNITS ● ● 0.7 0.8 2.4 2.6 0.8 0.9 2.8 3.
PAGE 5
LT1113 ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the temperature range – 55°C ≤ TA ≤ 125°C. VS = ±15V, VCM = 0V, unless otherwise noted. (Note 12) MIN LT1113AM TYP MAX MIN LT1113M TYP MAX SYMBOL PARAMETER CONDITIONS (Note 4) UNITS AVOL Large-Signal Voltage Gain VO = ±12V, RL = 10k VO = ±10V, RL = 1k ● ● 800 400 2700 1500 700 300 2500 1000 V/mV V/mV VOUT Output Voltage Swing RL = 10k RL = 1k ● ● ±13.0 ±11.5 ±12.5 ±12.0 ±12.5 ±11.0 ±12.5 ±12.
PAGE 6
LT1113 U W TYPICAL PERFOR A CE CHARACTERISTICS 1kHz Output Voltage Noise Density vs Source Resistance 0 2 6 4 TIME (SEC) 8 10 + VN 1k – RSOURCE 100 10 VN 1 100 SOURCE RESISTANCE ONLY 1k TA = 25°C VS = ±15V 1 8 7 6 5 4 3 2 1 10n 3n IB, VCM = 0V 1n IB, VCM = 10V 300p 100p 30p IOS, VCM = 0V 10p IOS, VCM = 10V 3p 1p –75 –50 –25 0 25 50 75 TEMPERATURE (°C) 1113 G04 Input Bias and Offset Currents Over the Common Mode Range V + –0 100 125 4.0 – V = –5V TO –20V 3.0 2.
PAGE 7
LT1113 U W TYPICAL PERFOR A CE CHARACTERISTICS Voltage Gain vs Chip Temperature Voltage Gain vs Frequency 10 TA = 25°C VS = ±15V 8 100 60 40 7 6 RL =10k 5 4 RL = 1k 3 80 30 100 20 120 PHASE 10 140 GAIN 2 20 60 TA = 25°C VS = ±15V CL = 10pF PHASE SHIFT (DEG) VOLTAGE GAIN (V/µV) 140 50 VS = ±15V VO = ±10V, RL = 1k VO = ±12V, RL = 10k 9 VOLTAGE GAIN (dB) 180 VOLTAGE GAIN (dB) Gain and Phase Shift vs Frequency 0 160 1 –20 0.
PAGE 8
LT1113 U W TYPICAL PERFOR A CE CHARACTERISTICS Distribution of Offset Voltage Drift with Temperature (N8, S8) Distribution of Offset Voltage Drift with Temperature (J8) 40 30 PERCENT OF UNITS 20 10 20 10 0 2 4 0 –25 –20 –15 –10 –5 8 6 5 TOTAL HARMONIC DISTORTION + NOISE (%) TOTAL HARMONIC DISTORTION + NOISE (%) 0.01 0.001 AV = 1 NOISE FLOOR 0.0001 20 100 1k FREQUENCY (Hz) 10k 20k AV = 100 0.
PAGE 9
LT1113 W U U UO APPLICATI S I FOR ATIO The LT1113 dual in the plastic and ceramic DIP packages are pin compatible with and directly replace such JFET op amps as the OPA2111 and OPA2604 with improved noise performance. Being the lowest noise dual JFET op amp available to date, the LT1113 can replace many bipolar op amps that are used in amplifying low level signals from high impedance transducers.
PAGE 10
LT1113 U W U UO APPLICATI S I FOR ATIO RF R2 CB CF RB – – R1 OUTPUT + CS RS CB ≅ CS RB = RS RS > R1 OR R2 CS RS + TRANSDUCER OUTPUT CB = CF CS RB = RF RS CB RB TRANSDUCER dQ dV Q = CV; =I=C dt dt 1113 • F02 Figure 2. Noninverting and Inverting Gain Configurations The gain therefore is 1 + CF/CS. For unity gain, CF should equal the transducer capacitance plus the input capacitance of the LT1113 and RF should equal RS.
PAGE 11
LT1113 U W U UO APPLICATI S I FOR ATIO INPUT: ±5.2V Sine Wave LT1113 Output OPA2111 Output Figure 3. Voltage Follower with Input Exceeding the Common Mode Range ( VS = ±5V) resistor (RB) will reduce the IR errors due to IB by an order of magnitude. A further reduction of IR errors can be achieved by using a DC servo circuit shown in the applications section of this data sheet.
PAGE 12
LT1113 W U U UO S I FOR ATIO APPLICATI Typical performance of the instrumentation amplifier: 15V IN – 3 8 1/2 LT1113 2 IC1 – 4 + Input offset voltage = 0.8mV R6 10k R4 1k 1 Input bias current = 320pA C1 50pF R1 1k Input offset current = 10pA –15V Input resistance = 1011Ω R2 200Ω 6 IN + R3 1k – 1/2 LT1113 5 + IC1 7 2 Input noise = 3.
PAGE 13
LT1113 UO TYPICAL APPLICATI S Accelerometer Amplifier with DC Servo C1 1250pF R1 100M R2 18k R3 2k C2 2µF – 7 + 2 – 5 R5 20M R4C2 = R5C3 > R1 (1 + R2/R3) C1 OUTPUT = 0.8mV/pC* = 8.0mV/g** DC OUTPUT ≤ 2.
PAGE 14
LT1113 UO TYPICAL APPLICATI S Low Noise Light Sensor with DC Servo C1 2pF R1 1M 2 – 1/2 LT1113 3 1 + D2 1N914 CD OUTPUT C2 0.022µF +V 8 R3 1k 2N3904 7 – D1 1N914 1/2 LT1113 + R5 1k HAMAMATSU S1336-5BK R2 100k 6 5 4 R4 1k –V R2C2 > C1R1 CD = PARASITIC PHOTODIODE CAPACITANCE VO = 100mV/µWATT FOR 200nm WAVE LENGTH 330mV/µWATT FOR 633nm WAVE LENGTH V– 1113 • TA05 10Hz Fourth Order Chebyshev Lowpass Filter (0.
PAGE 15
LT1113 U PACKAGE DESCRIPTIO J8 Package 8-Lead CERDIP (Narrow .300 Inch, Hermetic) (Reference LTC DWG # 05-08-1110) CORNER LEADS OPTION (4 PLCS) 0.023 – 0.045 (0.584 – 1.143) HALF LEAD OPTION 0.300 BSC (0.762 BSC) 0.015 – 0.060 (0.381 – 1.524) 0.008 – 0.018 (0.203 – 0.457) 0.005 (0.127) MIN 0.200 (5.080) MAX 0.045 – 0.068 (1.143 – 1.727) FULL LEAD OPTION 0.405 (10.287) MAX 8 6 7 5 0.025 (0.635) RAD TYP 0.220 – 0.310 (5.588 – 7.874) 0° – 15° 1 0.045 – 0.065 (1.143 – 1.651) 0.014 – 0.026 (0.
PAGE 16
LT1113 UO TYPICAL APPLICATI S Light Balance Detection Circuit R1 1M C1 2pF TO 8pF I1 PD1 VOUT = 1M • (I1 – I2) PD1,PD2 = HAMAMATSU S1336-5BK WHEN EQUAL LIGHT ENTERS PHOTODIODES, VOUT < 3mV. – I2 VOUT 1/2 LT1113 + PD2 1113 • TA07 Unity Gain Buffer with Extended Load Capacitance Drive Capability R2 1k C1 – R1 33Ω VOUT 1/2 LT1113 VIN + CL C1 = CL ≤ 0.