Datasheet

6
LT1101
1101fa
LT1101AM/AI LT1101M/I
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
G
E
Gain Error G = 100, V
0
= 0.1V to 3.5V, R
L
= 50k 0.026 0.080 0.028 0.120 %
G = 10, V
CM
= 0.15, R
L
= 50k 0.011 0.070 0.014 0.100 %
TCG
E
Gain Error Drift R
L
= 50k (Note 2) 1 4 1 5 ppm/°C
G
NL
Gain Nonlinearity G = 100, R
L
= 50k 45 110 48 140 ppm
G = 10, R
L
= 50k (Note 2) 4 13 5 15 ppm
V
OS
Input Offset Voltage 90 350 110 500 µV
LT1101ISW 110 950 µV
∆V
OS
/∆T Input Offset Voltage Drift (Note 2) 0.4 2.0 0.5 2.8 µV/°C
LT1101ISW 0.5 4.8 µV/°C
l
OS
Input Offset Current 0.16 0.80 0.19 1.30 nA
∆V
OS
/∆T Input Offset Current Drift (Note 2) 0.5 4.0 0.8 7.0 pA/°C
I
B
Input Bias Current 7 10 7 12 nA
∆I
B
/∆T Input Bias Current Drift (Note 2) 10 25 10 30 pA/°C
CMRR Common Mode G = 100, V
CM
= 0.1V to 3.2V 91 105 88 104 dB
Rejection Ratio G = 10, V
CM
= 0.1V to 2.9V, V
REF
= 0.15V 80 98 77 97 dB
I
S
Supply Current 88 135 92 160 µA
V
0
Maximum 0utput Output High, 50k to GND 3.8 4.1 3.8 4.1 V
Voltage Swing Output High, 2k to GND 3.0 3.7 3.0 3.7 V
Output Low, V
REF
= 0, No Load 4.5 8 4.5 8 mV
Output Low, V
REF
= 0, 2k to GND 0.7 1.5 0.7 1.5 mV
Output Low, V
REF
= 0, I
SINK
= 100µA 125 170 125 170 mV
V
S
= 5V, 0V, V
CM
= 0.1V, V
REF(PIN 1)
= 0.1V, Gain = 10 or 100,
–40°C ≤ T
A
≤ 85°C for AI/I grades, unless otherwise noted (Note 4).
ELECTRICAL CHARACTERISTICS