Datasheet

3
LT1022
1022fa
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating temperature range of V
CM
= 0V, 0°C ≤ T
A
≤ 70°C. V
S
= ± 15V,
unless otherwise noted.
LT1022CH
LT1022AC LT1022CN8
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
V
OS
Input Offset Voltage H Package ● 140 480 180 1000 µV
(Note 2) N8 Package
● 300 1700 µV
Average Temperature H Package ● 1.3 5.0 1.8 9.0 µV/°C
Coefficient of Input Offset Voltage N8 Package (Note 6)
● 3.0 15.0 µV/°C
I
OS
Input Offset Current Warmed Up, T
A
= 70°C ● 15 80 18 100 pA
I
B
Input Bias Current Warmed Up, T
A
= 70°C ● ±50 ±200 ±60 ±250 pA
A
VOL
Large-Signal Voltage Gain V
O
= ±10V, R
L
= 2k ● 80 250 60 250 V/mV
CMRR Common Mode Rejection Ratio V
CM
= ±10.4V ● 85 93 80 91 dB
PSRR Power Supply Rejection Ratio V
S
= ±10V to ±18V ● 86 103 84 101 dB
V
OUT
Output Voltage Swing R
L
= 2k ● ±12 ±13.1 ±12 ±13.1 V
LT1022AM LT1022M
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
V
OS
Input Offset Voltage (Note 2) ● 230 750 300 1500 µV
Average Temperature (Note 6) ● 1.5 5.0 2.0 9.0 µV/°C
Coefficient of Input Offset Voltage
I
OS
Input Offset Current Warmed Up, T
A
= 125°C ● 0.3 2.0 0.30 3.0 nA
I
B
Input Bias Current Warmed Up, T
A
= 125°C ● ± 0.5 ± 4.0 ± 0.7 ± 6.0 nA
A
VOL
Large Signal Voltage Gain V
O
= ±10V, R
L
= 2k ● 40 120 35 120 V/mV
CMRR Common-Mode Rejection Ratio V
CM
= ±10.4V ● 85 92 80 90 dB
PSRR Power Supply Rejection Ratio V
S
= ±10V to ±17V ● 86 102 84 100 dB
V
OUT
Output Voltage Swing R
L
= 2k ● ±12 ±12.9 ±12 ±12.9 V
Note 1: Absolute Maximum Ratings are those values beyond which the
life of a device may be impaired.
Note 2: Offset voltage is measured under two different conditions:
(a) approximately 0.5 seconds after application of power;
(b) at T
A
= 25°C, with the chip self-heated to approximately 45°C
to account for chip temperature rise when the device is fully warmed up.
Note 3: 10Hz noise voltage density is sample tested on every lot of A
grades. Devices 100% tested at 10Hz are available on request.
Note 4: This parameter is tested on a sample basis only.
Note 5: Current noise is calculated from the formula: i
n
= (2qI
B
)
1/2
, where
q = 1.6 • 10
–19
coulomb. The noise of source resistors up to 1GΩ swamps
the contribution of current noise.
Note 6: Offset voltage drift with temperature is practically unchanged when
the offset voltage is trimmed to zero with a 100k potentiometer between
the balance terminals and the wiper tied to V
+
. Devices tested to tighter
drift specifications are available on request.
The ● denotes the specifications which apply over the full operating temperature range of – 55°C ≤ T
A
≤ 125°C. V
S
= ±15V, V
CM
= 0V,
unless otherwise noted.
LT1022AM LT1022M, LT1022CH
LT1022AC LT1022CN8
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
GBW Gain-Bandwidth Product f = 1MHz 8.5 8.0 MHz
I
S
Supply Current 5.2 7.0 5.2 7.0 mA
Settling Time A = +1 or A = –1
10V Step to 0.05% 0.9 0.9 µs
10V Step to 0.02% 1.3 1.3 µs
Offset Voltage Adjustment Range R
POT
= 100k ±7 ±7mV
V
S
= ± 15V, T
A
= 25°C, V
CM
= 0V unless otherwise noted.