Datasheet
LTC2605/LTC2615/LTC2625
4
2605fa
ELECTRICAL CHARACTERISTICS
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. REF = 4.096V (V
CC
= 5V), REF = 2.048V (V
CC
= 2.7V), V
OUT
unloaded,
unless otherwise noted. (Note 9)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Digital I/O (Note 9)
V
IL
Low Level Input Voltage (SDA and SCL)
l
0.3V
CC
V
V
IH
High Level Input Voltage (SDA and SCL)
l
0.7V
CC
V
V
IL(CA)
Low Level Input Voltage (CA0 to CA2) See Test Circuit 1
l
0.15V
CC
V
V
IH(CA)
High Level Input Voltage (CA0 to CA2) See Test Circuit 1
l
0.85V
CC
V
R
INH
Resistance from CAn (n = 0,1,2) to V
CC
to Set CAn = V
CC
See Test Circuit 2
l
10 kΩ
R
INL
Resistance from CAn (n = 0,1,2) to GND
to Set CAn = GND
See Test Circuit 2
l
10 kΩ
R
INF
Resistance from CAn (n = 0,1,2) to V
CC
or GND to Set CAn = FLOAT
See Test Circuit 2
l
2MΩ
V
OL
Low Level Output Voltage Sink Current = 3mA
l
0 0.4 V
t
OF
Output Fall Time V
O
= V
IH(MIN)
to V
O
= V
IL(MAX)
, C
B
= 10pF to 400pF
(Note 7)
l
20 + 0.1CB 250 ns
t
SP
Pulse Width of Spikes Surpassed by
Input Filter
l
050ns
I
IN
Input Leakage 0.1V
CC
≤ V
IN
≤ 0.9V
CC
l
1μA
C
IN
I/O Pin Capacitance (Note 12)
l
10 pF
C
B
Capacitance Load for Each Bus Line
l
400 pF
C
CAn
External Capacitive Load on Address
Pins CA0, CA1 and CA2
l
10 pF
The l denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at T
A
= 25°C.
REF = 4.096V (V
CC
= 5V), REF = 2.048V (V
CC
= 2.7V), V
OUT
unloaded, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS
LTC2625/LTC2625-1 LTC2615/LTC2615-1 LTC2605/LTC2605-1
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX
AC Performance
t
S
Settling Time (Note 5) ±0.024% (±1LSB at 12 Bits)
±0.006% (±1LSB at 14 Bits)
±0.0015% (±1LSB at 16 Bits)
77
9
7
9
10
μs
μs
μs
Settling Time for 1LSB Step
(Note 6)
±0.024% (±1LSB at 12 Bits)
±0.006% (±1LSB at 14 Bits)
±0.0015% (±1LSB at 16 Bits)
2.7 2.7
4.8
2.7
4.8
5.2
μs
μs
μs
Voltage Output Slew Rate 0.80 0.80 0.80 V/μs
Capacitive Load Driving 1000 1000 1000 pF
Glitch Inpulse At Mid-Scale Transition 12 12 12 nV•s
Multiplying Bandwidth 180 180 180 kHz
e
n
Output Voltage Noise Density At f = 1kHz
At f = 10kHz
120
100
120
100
120
100
nV/√Hz
nV/√Hz
Output Voltage Noise 0.1Hz to 10Hz 15 15 15 μV
P-P