Datasheet

LTC1863/LTC1867
4
18637fa
DIGITAL INPUTS AND DIGITAL OUTPUTS
The l denotes the specifi cations which apply over the
full operating temperature range, otherwise specifi cations are at T
A
= 25°C. (Note 5)
POWER REQUIREMENTS
TIMING CHARACTERISTICS
The l denotes the specifi cations which apply over the full operating temperature
range, otherwise specifi cations are at T
A
= 25°C. (Note 5)
The l denotes the specifi cations which apply over the full operating temperature
range, otherwise specifi cations are at T
A
= 25°C. (Note 5)
SYMBOL PARAMETER CONDITIONS
LTC1863/LTC1867/LTC1867A
UNITSMIN TYP MAX
V
DD
Supply Voltage (Note 9) 4.75 5.25 V
I
DD
Supply Current f
SAMPLE
= 200ksps
NAP Mode
SLEEP Mode
l
l
1.3
150
0.2
1.8
3
mA
μA
μA
P
DISS
Power Dissipation
l
6.5 9 mW
SYMBOL PARAMETER CONDITIONS
LTC1863/LTC1867/LTC1867A
UNITSMIN TYP MAX
f
SAMPLE
Maximum Sampling Frequency
l
200 kHz
t
CONV
Conversion Time
l
33.5 μs
t
ACQ
Acquisition Time
l
1.5 1.1 μs
f
SCK
SCK Frequency 40 MHz
t
1
CS/CONV High Time Short CS /CONV Pulse Mode
l
40 100 ns
t
2
SDO Valid After SCK↓ C
L
= 25pF (Note 11)
l
13 22 ns
t
3
SDO Valid Hold Time After SCK↓ C
L
= 25pF
l
511 ns
t
4
SDO Valid After CS/CONV↓ C
L
= 25pF
l
10 30 ns
t
5
SDI Setup Time Before SCK↑
l
15 –6 ns
t
6
SDI Hold Time After SCK↑
l
10 4 ns
t
7
SLEEP Mode Wake-Up Time C
REFCOMP
= 10μF, C
VREF
= 2.2μF 60 ms
t
8
Bus Relinquish Time After CS/CONV↑ C
L
= 25pF
l
20 40 ns
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime
Note 2: All voltage values are with respect to GND (unless otherwise noted).
Note 3: When these pin voltages are taken below GND or above V
DD
, they
will be clamped by internal diodes. This product can handle input currents
of greater than 100mA without latchup.
SYMBOL PARAMETER CONDITIONS
LTC1863/LTC1867/LTC1867A
UNITSMIN TYP MAX
C
IN
Digital Input Capacitance 2pF
V
OH
High Level Output Voltage (SDO) V
DD
= 4.75V, I
O
= –10μA
V
DD
= 4.75V, I
O
= –200μA
l 4
4.75
4.74
V
V
V
OL
Low Level Output Voltage (SDO) V
DD
= 4.75V, I
O
= 160μA
V
DD
= 4.75V, I
O
= 1.6mA
l
0.05
0.1
0.4
V
V
I
SOURCE
Output Source Current SDO = 0V –32 mA
I
SINK
Output Sink Current SDO = V
DD
19 mA
Hi-Z Output Leakage
Hi-Z Output Capacitance
CS/CONV = High, SDO = 0V or V
DD
CS/CONV = High (Note 10)
l
l
±10
15
μA
pF
Data Format Unipolar
Bipolar
Straight Binary
Two’s Complement