Datasheet

LTC4227
5
422712fa
For more information www.linear.com/LTC4227
Typical perForMance characTerisTics
Diode Gate Voltage vs Current Diode Gate Voltage vs IN Voltage Hot Swap Gate Voltage vs Current
IN Supply Current vs Voltage INTV
CC
Load Regulation CPO Voltage vs Current
elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
IN
= 12V, unless otherwise noted.
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into device pins are positive; all currents out of
the device pins are negative. All voltages are referenced to GND unless
otherwise specified.
Note 3: An internal clamp limits the DGATE and CPO pins to a minimum of
10V above and a diode below IN. Driving these pins to voltages beyond the
clamp may damage the device.
Note 4: An internal clamp limits the HGATE pin to a minimum of 10V
above and a diode below OUT. Driving this pin to voltages beyond the
clamp may damage the device.
T
A
= 25°C, V
IN
= 12V, unless otherwise noted.
V
IN
(V)
0
0
I
IN
(mA)
3 6 9 12
4227 G01
15 18
0.5
1
1.5
2
2.5
3
V
OUT
= 3.3V V
OUT
= 12V
V
OUT
= 0V
I
LOAD
(mA)
0
0
INTV
CC
(V)
1
2
3
4
5
6
–2 –4 –6 –8
4227 G02
–10
V
IN
= 12V
V
IN
= 3.3V
I
CPO
(µA)
0
12
10
8
6
4
2
0
–2
–60 –100
4227 G03
–20 –40
–80 –120
V
CPO
– V
IN
(∆V
CPO
) (V)
V
IN
= 18V
V
IN
= 2.9V
I
DGATE
(µA)
0
12
10
8
6
4
2
0
–2
–60 –100
4227 G04
–20 –40
–80 –120
V
DGATE
– V
IN
(∆V
DGATE
) (V)
V
IN
= 18V
V
IN
= 2.9V
V
SENSE
+
= V
IN
– 0.1V
I
HGATE
(µA)
0
14
12
10
8
6
4
2
0
–6 –10
4227 G05
–2 –4
–8 –12
GATE DRIVE (∆V
HGATE
) (V)
V
IN
= 12V
V
OUT
= V
IN
V
IN
= 2.9V
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OH
Output High Voltage (FAULT, PWRGD) I = –1µA
l
INTV
CC
– 1 INTV
CC
– 0.5 V
I
OH
Input Leakage Current (FAULT, PWRGD) V = 18V
l
0 ±1 µA
I
PU
Output Pull-Up Current (FAULT, PWRGD) V = 1.5V
l
–7 –10 –13 µA
t
RST(ON)
ON Low to FAULT High
l
20 40 µs
V
IN
(V)
0
4
V
DGATE
– V
IN
(∆V
DGATE
) (V)
3 6 9 12
4227 G04b
15 18
6
8
10
12
14
V
SENSE
+
= V
IN
– 0.1V