Datasheet

LTC4219
4
4219fb
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into pins are positive, all voltages are referenced to
GND unless otherwise specifi ed.
Note 3: An internal clamp limits the GATE pin to a maximum of 6.5V
above OUT. Driving this pin to voltages beyond the clamp may damage the
device.
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
DD
= 12V unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Outputs
V
INTVCC
INTV
CC
Output Voltage V
DD
= 5V, 15V
I
LOAD
= 0mA, –10mA
l
2.8 3.1 3.2 V
V
OL
PG, FLT Pin Output Low Voltage I
OUT
= 2mA
l
0.4 0.8 V
I
OH
PG, FLT Pin Input Leakage Current V
OUT
= 30V
l
0 ±10 µA
V
TIMER(H)
TIMER Pin High Threshold V
TIMER
Rising
l
1.2 1.235 1.28 V
V
TIMER(L)
TIMER Pin Low Threshold V
TIMER
Falling
l
0.1 0.21 0.3 V
I
TIMER(UP)
TIMER Pin Pull-Up Current V
TIMER
= 0V
l
–80 –100 –120 µA
I
TIMER(DN)
TIMER Pin Pull-Down Current V
TIMER
= 1.2V
l
1.4 2 2.6 µA
I
TIMER(RATIO)
TIMER Pin Current Ratio I
TIMER(DN)
/I
TIMER(UP)
l
1.6 2 2.7 %
A
IMON
I
MON
Pin Current Gain I
OUT
= 2.5A
l
18.5 20 21.5 µA/A
I
OFF(IMON)
I
MON
Pin Offset Current I
OUT
= 150mA
l
0 ±4.5 µA
I
GATE(UP)
Gate Pull-Up Current Gate Drive On, V
GATE
= V
OUT
= 12V
l
–19 –24 –29 µA
I
GATE(DN)
Gate Pull-Down Current Gate Drive Off, V
GATE
= 18V, V
OUT
= 12V
l
190 250 340 µA
I
GATE(FST)
Gate Fast Pull-Down Current Fast Turn Off, V
GATE
= 18V, V
OUT
= 12V 140 mA
AC Characteristics
t
PHL(GATE)
Input High (EN1, EN2) to Gate Low
Propagation Delay
V
GATE
< 16.5V Falling
l
810 µs
t
PHL(ILIM)
Short Circuit to Gate Low V
FB
= 0, Step I
SENSE
to 6A,
V
GATE
< 15V Falling
l
15 µs
t
D(ON)
Turn-On Delay Step V
EN1
and V
EN2
to 0V, V
GATE
> 13V
l
50 100 150 ms
t
D(CB)
Circuit Breaker Filter Delay Time (Internal) V
FB
= 0V, Step I
SENSE
to 3A
l
1.5 2 2.7 ms
Note 4: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specifi ed maximum operating junction
temperature may impair device reliability.
Note 5: T
J
is calculated from the ambient temperature, T
A
, and power
dissipation, P
D
, according to the formula:
T
J
= T
A
+ (P
D
• 43°C/W)