Datasheet

LTC4360-1/LTC4360-2
3
436012fa
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to GND unless otherwise
specified.
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
IN
= 5V, V
ON
= 0V (LTC4360-1) unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Supplies
V
IN
Input Voltage Range
l
2.5 80 V
V
IN(UVL)
Input Undervoltage Lockout V
IN
Rising
l
1.8 2.1 2.45 V
I
IN
Input Supply Current LTC4360-1 V
ON
= 0V, LTC4360-2
l
220 400 µA
LTC4360-1 V
ON
= 2.5V
l
1.5 10 µA
Thresholds
V
IN(OV)
IN Pin Overvoltage Threshold V
IN
Rising
l
5.684 5.8 5.916 V
∆V
OV
Overvoltage Hysteresis
l
25 100 200 mV
External Gate Drive
∆V
GATE
External N-Channel MOSFET Gate Drive
(V
GATE
– V
OUT
)
2.5V ≤ V
IN
< 3V, I
GATE
= –1µA
3V ≤ V
IN
< 5.5V, I
GATE
= –1µA
l
l
3.5
4.5
4.5
6
6
7.9
V
V
V
GATE(TH)
GATE High Threshold for PWRGD Status V
IN
= 3.3V
V
IN
= 5V
l
l
5.7
6.7
6.3
7.2
6.8
7.8
V
V
I
GATE(UP)
GATE Pull-Up Current V
GATE
= 1V
l
–5 –10 –15 µA
V
GATE(UP)
GATE Ramp-Up V
GATE
= 1V to 7V
l
1.5 3 4.5 V/ms
I
GATE(FST)
GATE Fast Pull-Down Current Fast Turn-Off, V
IN
= 6V, V
GATE
= 9V
l
15 30 60 mA
I
GATE(DN)
GATE Pull-Down Current V
ON
= 2.5V, V
GATE
= 9V (LTC4360-1)
l
10 40 80 µA
Input Pins
I
OUT(IN)
OUT Input Current V
OUT
= 5V, V
ON
= 0V
V
OUT
= 5V, V
ON
= 2.5V
l
l
5 10
0
20
±3
µA
µA
V
ON(TH)
ON Input Threshold (LTC4360-1)
l
0.4 1.5 V
I
ON
ON Pull-Down Current V
ON
= 2.5V (LTC4360-1)
l
2.5 5 10 µA
Output Pins
V
GATEP(CLP)
IN to GATEP Clamp Voltage V
IN
= 8V to 80V (LTC4360-2)
l
5 5.8 7.5 V
R
GATEP
GATEP Resistive Pull-down V
GATEP
= 3V (LTC4360-2)
l
0.8 2 3.2 MΩ
V
PWRGD(OL)
PWRGD Output Low Voltage V
IN
= 5V, I
PWRGD
= 3mA
l
0.23 0.4 V
R
PWRGD
PWRGD Pull-Up Resistance to OUT V
IN
= 6.5V, V
PWRGD
= 1V
l
250 500 800 kΩ
Delay
t
ON
GATE On Delay V
IN
High to I
GATE
= –5µA
l
50 130 200 ms
t
OFF
GATE Off Propagation Delay V
IN
= Step 5V to 6.5V to PWRGD High
l
0.25 1 µs
t
PWRGD
PWRGD Delay V
IN
= Step 5V to 6.5V
V
GATE
> V
GATE(TH)
to PWRGD Low
l
l
25
0.25
65
1
100
µs
ms
t
ON(OFF)
ON High to GATE Off V
ON
= Step 0V to 2.5V (LTC4360-1)
l
2 5 µs
Note 3: An internal clamp limits V
GATE
to a minimum of 4.5V above V
OUT
.
Driving this pin to voltages beyond this clamp may damage the device.