Datasheet

LTC4358
3
4358fa
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
OUT
= V
DD
, V
DD
= 9V to 26.5V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
DD
Operating Supply Range
l
926.5V
I
DD
Operating Supply Current
l
0.6 mA
I
IN
IN Pin Current V
IN
= V
OUT
± 1V, No Load
l
150 350 450 μA
I
OUT
OUT Pin Current V
IN
= V
OUT
± 1V, No Load
l
80 160 μA
I
DRAIN
DRAIN Pin Current V
IN
= 0V, V
OUT
= V
DD
= V
DRAIN
= 26.5V
l
5
150
μA
μA
ΔV
GATE
N-Channel Gate Drive (V
GATE
– V
IN
)V
DD,
V
OUT
= 9V to 26.5V
l
4.5 15 V
I
GATE(UP)
N-Channel Gate Pull Up Current V
GATE
= V
IN,
V
IN
– V
OUT
= 0.1V
l
–14 –20 –26 μA
I
GATE(DOWN)
N-Channel Gate Pull Down
Current in Fault Condition
V
GATE
= V
IN
+ 5V
l
12 A
t
ON
Turn-On Time V
IN
– V
OUT
= –1V
–
|
–
0.1V, V
DRAIN
= V
IN
,
V
OUT
= V
DD,
V
GATE
– V
IN
> 4.5V
l
200 500 μs
t
OFF
Turn-Off Time V
IN
– V
OUT
= 55mV
–
|
–
–1V, V
DRAIN
= V
IN
,
V
OUT
= V
DD,
V
GATE
– V
IN
< 1V
l
300 500 ns
ΔV
SD
Source-Drain Regulation Voltage
(V
IN
– V
OUT
)
1mA < I
IN
< 100mA
l
10 25 55 mV
ΔV
SD
Body Diode Forward Voltage Drop I
IN
= 5A, MOSFET Off
l
0.6 0.8 1 V
R
DS(ON)
Internal N-Channel MOSFET On
Resistance
I
IN
= 5A
l
20 40 mΩ
Note 2: All currents into pins are positive, all voltages are referenced to
GND unless otherwise specifi ed.
Note 3: An internal clamp limits the GATE pin to a minimum of 6V above
IN. Driving this pin to voltages beyond this clamp may damage the device.