Datasheet

LEM reserves the right to carry out modications on its transducers, in order to improve them, without prior notice.
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090804/6
I
PN
= 50 .. 500 A
Features
Open loop Hall effect transducer ●
Busbar mounting or panel ●
mounting.
Isolated plastic case recognized ●
according to UL 94-V0.
Advantages
Low power consumption ●
Split core easy for mounting ●
High isolation between the ●
primary and the secondary circuit
Through-hole, no insertion losses. ●
Applications
Power supplies for TELECOM ●
(monitoring & measuring)
Uninterruptible Power Supplies ●
(UPS)
Switched Mode Power Supplies ●
(SMPS)
Electrical chemistry ●
Chooper ●
Battery supplied applications. ●
Application domain
Industrial. ●
Current Transducer HTR 50 to 500-SB
For the electronic measurement of currents: DC, AC, pulsed...,
with galvanic isolation between the primary circuit (high power) and
the secondary circuit (electronic circuit).
Electrical data
Type Primary nominal Primary current,
current rms measuring range
I
PN
(A) I
PM
(A)
HTR 50-SB 50 ± 100
HTR 100-SB 100 ± 200
HTR 200-SB 200 ± 400
HTR 300-SB 300 ± 600
HTR 400-SB 400 ± 800
HTR 500-SB 500 ± 1000
V
OUT
Output voltage (Analog) ± 4 V
R
L
Load resistance > 10 kW
V
C
Supply voltage (± 5 %) ± 12 .. 15 V
I
C
Current consumption (max) 20 mA
X Accuracy
1)
@ I
PN
, T
A
= 25°C, @ ± 12 .. 15 V (± 5 %) ≤ ± 2 %
Accuracy - Dynamic performance data
ε
L
Linearity error
1)
≤ ± 1 %
Typ Max
V
OE
Electrical offset voltage @ I
P
= 0, T
A
= 25°C ± 45 ± 65 mV
V
OM
Magnetic offset voltage @ I
P
= 0 and specied R
M
,
after an overload of 3 x I
PN
± 10 ± 20 mV
V
OT
Temperature variation of V
O
- 10°C .. + 70°C ± 70 ± 240 mV
TCε
G
Thermal drift of the gain, T
A
= - 10 .. + 70°C ± 140 ± 450 mV
t
r
Response time to 90 % of I
PN
step < 10 µs
di/dt di/dt accurately followed > 50 A/µs
BW Frequency bandwidth (- 1 dB) DC .. 10 kHz
T
A
Ambient operating temperature - 10 .. + 70 °C
General data
T
S
Ambient storage temperature - 20 .. + 85 °C
m Mass 80 g
Standard EN 50178
Note:
1)
Execludes the electrical offset.