Datasheet

120202/6
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I
PN
= 200-400-800 A
Features
•
Hall effect measuring principle
•
Galvanic isolation between primary
and secondary circuit
•
Low power consumption
•
Single power supply +5V
•
Ratiometric offset
•
T
A
= -40..+105 °C
•

Isolated plastic case recognized
according to UL 94-V0.
Special Features
•
PCB xation by 4pins x Ø 1.0
Advantages
•
Small size and space saving
•

Only one design for wide current
ratings range
•
High immunity to external
interference.
•
V
REF.
IN/OUT.
Applications
•

Forklift drives
•

AC variable speed drives
•

Static converters for DC motor
drives
•

Battery supplied applications
•

Uninterruptible Power Supplies
(UPS)
•

Switched Mode Power Supplies
(SMPS)
•

Power supplies for welding
applications.
Application domain
•

Industrial.
Current Transducer HTFS 200..800-P/SP2
For the electronic measurement of currents : DC, AC, pulsed, mixed,
with galvanic isolation between the primary circuit (high power)
and the secondary circuit (electronic circuit).
Primary nominal Primary current Type RoHS since
current rms measuring range datecode
I
PN
(A)I
PM
(A)
200 ± 300 HTFS 200-P/SP2 45326
400 ± 600 HTFS 400-P/SP2 45060
800 ± 1200 HTFS 800-P/SP2 45060
V
OUT
Output voltage (Analog) @ I
P
V
REF
± (1.25･I
P
/ I
PN
) V
I
P
= 0 V
REF
± 0.025 V
V
REF
Reference voltage
1)
- Output voltage 1/2V
C
± 0.025 V
V
REF
Output impedance typ. 200 Ω
V
REF
Load impedance ≥ 200 kΩ
R
L
Load resistance
≥
2 k
Ω
R
OUT
Output internal resistance
<
10
 Ω
C
L
Capacitive loading
<
1 µF
V
C
Supply voltage (± 5 %) 5 V
I
C
Current consumption @ V
C
= 5 V 22 mA
X Accuracy
2)
@ I
PN
, T
A
= 25°C ≤ ± 1 % of I
PN
ε
L
Linearity error (0 .. 1.5 x I
PN
) ≤ ± 0.5 % of I
PN
TCV
OE
Temperature coefcient of V
OE
@ I
P
= 0 ≤ ± 0.3 mV/K
TCV
REF
Temperature coefcient of V
REF
≤ ± 0.01 %/K
TCV
OUT
/ V
REF
Temperature coefcient of V
OUT
/ V
REF
@ I
P
= 0 ≤ ± 0.2 mV/K
TCV
OUT
Temperature coefcient of V
OUT
≤ ± 0.05 % of reading/K
V
OM
Magnetic offset voltage @ I
P
= 0,
after an overload of 3 x I
PN DC
< ± 0.5 % of I
PN
t
ra
Reaction time @ 10 % of I
PN
< 3 µs
t
r
Response time to 90 % of I
PN
step < 7 µs
di/dt di/dt accurately followed > 100 A/µs
V
no
Output voltage noise (DC ..10 kHz) < 15 mVpp
(DC .. 1 MHz) < 40 mVpp
BW Frequency bandwidth (- 3 dB)
3)
DC .. 50 kHz
T
A
Ambient operating temperature - 40 .. + 105 °C
T
S
Ambient storage temperature - 40 .. + 105 °C
m Mass 60 g
Standard EN 50178: 1997
Notes :
1)
It is possible to overdrive V
REF
with an external reference voltage

between 2 - 2.8 V providing its ability to sink or source approx. 2.5 mA.
2)
Excluding offset and Magnetic offset voltage.
3)
Small signal only to avoid excessive heatings of the magnetic core.
All Data are given with a R
L
= 10 kΩ
Electrical data
Accuracy - Dynamic performance data
General data