Datasheet

LEM reserves the right to carry out modications on its transducers, in order to improve them, without prior notice.
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I
PN
= 50 .. 600 A
Features
● Hall effect measuring principle
● Galvanic isolation between
primary and secondary circuit
● Isolation test voltage 3300 V
● Low power consumption
● Single power supply + 5 V
● Fixed offset & Gain
● Isolated plastic case recognized
according to UL 94-V0.
Advantages
● Easy installation
● Small size and space saving
● Only one design for wide current
ratings range
● High immunity to external
interference
● Internal & external reference.
Applications
● AC variable speed drives
● Static converters for DC motor
drives
● Battery supplied applications
● Uninterruptible Power Supplies
(UPS)
● Switched Mode Power Supplies
(SMPS)
● Power supplies for welding
applications.
Application domain
● Industrial.
Current Transducer HASS 50..600-S
For the electronic measurement of currents: DC, AC, pulsed, mixed,
with galvanic isolation between the primary circuit (high power)
and the secondary circuit (electronic circuit).
Primary nominal Primary current Type
current rms measuring range
I
PN
(A) I
PM
(A)
50 ± 150 HASS 50-S
100 ± 300 HASS 100-S
200 ± 600 HASS 200-S
300 ± 900 HASS 300-S
400 ± 900 HASS 400-S
500 ± 900 HASS 500-S
600 ± 900 HASS 600-S
V
OUT
Analog Output voltage @ I
P
V
OE
± (0.625. I
P
/ I
PN
) V
G
TH
Theoretical sensitivity 0.625 V/ I
PN
V
REF
Reference voltage
1)
Ouput voltage 2.5 ± 0.025 V
Ouput impedance typ. 200 Ω
Load impedance ≥ 200 Ω
R
L
Load resistance ≥ 2 kΩ
R
OUT
Output internal resistance < 5 Ω
C
L
Capacitive loading (± 20 %) = 4.7 nF
V
C
Supply voltage (± 5 %)
2)
5 V
I
C
Current consumption @ V
C
= 5V 19 mA
X Accuracy
3)
@ I
PN
, T
A
= 25°C ≤ ± 1 %
Accuracy - Dynamic performance data
ε
L
Linearity error 0 .. I
PN
≤ ± 0.5 %
0 .. I
PM
≤ ± 1 %
TCV
OE
Temperature coefcient of V
OE
(+25.. +85°C) ≤ ± 0.4 mV/K
(-40.. +25°C) ≤ ± 0.525 mV/K
TCV
REF
Temperature coefcient of V
REF
(+25.. +85°C) ≤ ± 0.01 %/K
(-40.. +25°C) ≤ ± 0.015 %/K
TCV
OE
/V
REF
Temperature coefcient of V
OE
/V
REF
≤ ± 0.15 mV/K
TCG
Temperature coefcient of G ≤ ±0.05% of reading//K
V
OE
Electrical offset voltage @ I
P
= 0, T
A
= 25°C V
REF
± 0.025 V
V
OM
Magnetic offset voltage @ I
P
= 0
after an overload of I
PM
< ± 0.4 %
t
ra
Reaction time to 10 % of I
PN
step < 3 µs
t
r
Response time to 90 % of I
PN
step < 5 µs
di/dt di/dt accurately followed > 100 A/µs
V
no
Output voltage noise (DC .. 10 kHz) < 20 mVpp
(DC .. 1 MHz) < 40 mVpp
BW Frequency bandwidth (- 3 dB)
4)
DC .. 50 kHz
Notes:
1)
It is possible to overdrive V
REF
with an external reference voltage
 between 1.5V - 2.8V providing its ability to sink or source approximately 5 mA.
2)
Maximum supply voltage (not operating) < 6.5 V
3)
Excluding Offset and Magnetic offset voltage
4)
Small signal only to avoid excessive heatings of the magnetic core.
All Data are given with a R
L
= 10 kΩ
Electrical data