Datasheet

High Power Multi-Junction
Pulsed Laser Diodes
905D1S3J0XX
FEATURES
 Multi-junction devices up to 75 W
 75 μm, 150 μm and 225 μm source size
 2.6 W/A efficiency
 Proven InGaAs / GaAs high reliability structure
 High power multi-junction structure for narrow far
field
 Excellent temperature stability
 Hermetic and custom designed package
APPLICATIONS
 Range finding
 Surveying equipment
 Weapons simulation
 Laser radar
 Obstacle detection
 Medical
OPTICAL CHARACTERISTICS AT t
RT
= 21°C
MIN TYP MAX UNITS
Wavelength of peak radiant intensity 
895 905 915 nm
Spectral bandwidth  at 50% intensity points
8 nm
Wavelength temperature coefficient 0.27 nm/°C
Beam spread (50% peak intensity)
- Parallel to junction plane 
- Perpendicular to junction plane 
12
20
Degrees
Degrees
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