Datasheet

SPEC NO: DSAD6806 REV NO: V.4 DATE: AUG/30/2006 PAGE: 2 OF 2
APPROVED: J. Lu CHECKED: Allen Liu DRAWN: Z.Z.YANG
Electrical / Optical Characteristics at TA=25°C
Absolute Maximum Ratings at T
A=25°C
Symbol Parameter Min. Typ. Max. Units Test Conditions
VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V
IC=100uA
Ee=0mW/cm
2
VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V
IE=100uA
Ee=0mW/cm
2
VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V
IC=2mA
Ee=20mW/cm
2
I CEO Collector Dark Current - - 100 nA
VCE=10V
Ee=0mW/cm
2
TR
Rise Time (10％ to 90％ )
- 3 - us
TF
Fall Time (90％ to 10％ )
- 3 - us
I (ON) On State Collector Current 0.7 3.0 - mA
VCE = 5V,
Ee=1mW/cm
2
,
λ=940nm
VCE = 5V
I
C=1mA
R
L=1000Ω
Parameter Max.Ratings
Collector-to-Emitter Breakdown Voltage 30V
Emitter-to-Collector Breakdown Voltage 5V
Power Dissipation at (or below) 25°C Free Air Temperature 100mW
Operating Temperature Range
Storage Temperature Range -40°C ~ +85°C
Lead Solder Temperature (>5mm for 5sec) 260°C
-40°C ~ +85°C