Phau Ntawv Qhia

NTMFS5C460NL
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
G
, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Safe Operating Area Figure 12. I
PEAK
vs. Time in Avalanche
V
DS
(V) TIME IN AVALANCHE (s)
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
I
PEAK
, (A)
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
ISS
C
OSS
C
RSS
V
DS
= 20 V
T
J
= 25°C
I
D
= 35 A
Q
GS
Q
GD
V
GS
= 4.5 V
V
DS
= 20 V
I
D
= 35 A
t
d(off)
t
d(on)
t
f
t
r
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
T
J
(initial)= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
1 ms
10 ms
T
C
= 25°C
V
GS
≤ 10 V
Single Pulse
1
100
1000
10000
0 10203040
0
2
4
6
8
10
0102025
1
10
100
1000
1 10 100
0.001
10
0.2 0.4 0.6 0.8 1.0 1.2
1000
1 10 1000.1
100
10
1
0.1
0.01
0.1
10
100
1E−41E−3 10E−2
10
5152535
515
1
3
5
7
9
V
GS
= 0 V
100
1
0.1
0.01
500 ms
1
T
J
(initial)= 100°C
Q
T
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