Datasheet

MEASURABLE COMPONENTS
Diodes
Forward voltage drop < 5 V
Resistors
0,01 Ω - 50 MΩ
Sine wave
Square wave
Pulse wave
Triangle wave
Ramp wave
DC
Batteries
0,01 - 4,5 V
Field eect transistors
JFET
IGBT
MOSFET
Zener Diodes
1-2-3 testing range: 0,01 - 4,5 V
K-A-A testing range: 0,01 - 24 V
Capacitors
25 pF - 100 mF
Inductors
10 uH - 1000 uH
Input voltage
0 - 16 V
Silicon controlled rectier
& triacs
Turn on voltage < 5 V
Gate trigger current < 6 mA
Forward voltage drop,
junction capacitance,
reverse leakage current
Resistance
1 - 100 kHz, 0 - 3,3 V, 50%
1 - 100 kHz, 3,3 V, 50%
1 - 100 kHz, 3,3 V, 0 - 100%
1 - 100 kHz, 0 - 3,3 V, 50%
1 - 100 kHz, 0 - 3,3 V, 0 - 100%
0 - 3,3 V
Voltage value, positive & nega-
tive polarity
JFET: Gate capacitance(Cg),
drain current (Id at Vgs),
protection diode forward
voltage drop (Uf)
IGBT: drain current (Id at Vgs),
protection diode forward
voltage drop (Uf)
MOSFET: turn-on voltage (Vt),
gate capacitance (Cg),
drain-source resistance (Rds),
protection diode forward
voltage drop (Uf)
1-2-3: Forward voltage drop,
reverse breakdown voltage
K-A-A: reverse breakdown
voltage
Capacity, loss factor (Vloss)
Inductance value,
DC resistance
Voltage value
Gate voltage
Triodes
hFE > 10, hFE < 600
Amplication (hFE),
base-emitter-voltage (Ube),
collector-emitter reverse
cut-o current (Iceo, Ices),
protection diode forward
voltage drop (Uf)
SIGNAL-GENERATOR