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MF1S50yyX_V1 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.0 — 3 March 2014
279230 28 of 40
NXP Semiconductors
MF1S50yyX/V1
MIFARE Classic EV1 1K - Mainstream contactless smart card IC
13. Limiting values
Stresses above one or more of the limiting values may cause permanent damage to the
device. Exposure to limiting values for extended periods may affect device reliability.
[1] ANSI/ESDA/JEDEC JS-001; Human body model: C = 100 pF, R = 1.5 k
14. Characteristics
[1] T
amb
=22°C, f=13,56Mhz, V
LaLb
= 1,5 V RMS
Table 30. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
I
I
input current - 30 mA
P
tot
/pack total power dissipation per package - 120 mW
T
stg
storage temperature 55 125 C
T
amb
ambient temperature 25 70 C
V
ESD
electrostatic discharge voltage on LA/LB
[1]
2- kV
Table 31. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
C
i
input capacitance
[1]
14.9 16.9 19.0 pF
f
i
input frequency - 13.56 - MHz
EEPROM characteristics
t
ret
retention time T
amb
= 22 C10--year
N
endu(W)
write endurance T
amb
= 22 C 100000 200000 - cycle