Datasheet

CS30-14io1
0.01 0.1 1
100
150
200
250
300
350
400
0.5 1.0 1.5 2.0
0
20
40
60
80
10
0
10
1
10
2
10
3
10
4
0.0
0.2
0.4
0.6
I
TSM
[A]
I
T
[A]
V
T
[V]
t[ms]
Z
thJC
[K/W]
23456789011
100
1000
I
2
t
[A
2
s]
t[ms]
I
T(AV)M
[A]
T
C
[°C]
0 255075100125150
0
20
40
60
80
Fig. 1 Forward characteristics
Fig. 3 I
2
t versus time (1-10 ms)
t[s]
Fig. 6 Max. forward current
at case temperature
Fig. 2 Surge overload current
Fig. 8 Transient thermal impedance
T
VJ
= 25°C
T
VJ
=125°C
T
VJ
=45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
=45°C
V
R
= 0 V
125°C
150°C
010203040
0
10
20
30
40
50
60
I
F(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fi
g
. 7b and ambient tem
p
erature
0 50 100 150
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
10 100 1000
1
10
100
1000
1 10 100 1000 10000
0.1
1
10
I
G
[mA]
V
G
[V]
t
gd
[μs]
I
G
[mA]
typ.
Limit
T
VJ
=125°C
Fig. 4 Gate trigger characteristics
Fig. 5 Gate controlled delay time
1: I
GD
,T
VJ
=150°C
2: I
GT
,T
VJ
=25°C
3: I
GT
,T
VJ
=-40°C
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
dc =
1
0.5
0.4
0.33
0.17
0.08
R
thi
[K/W] t
i
[s]
0.08 0.01
0.06 0.0001
0.2 0.02
0.05 0.2
0.11 0.11
2
1
3
6
4
5
4: P
GAV
=0.5W
5: P
GM
=5W
6: P
GM
=10W
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20130306aData according to IEC 60747and per semiconductor unless otherwise specified
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