Datasheet
CS30-16io1
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
V
I
A
V
T
1,30
R 0,5 K/W
min.
30
V V
50T = 25°C
VJ
T = °C
VJ
mA2V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
120
P
tot
250 WT = 25°C
C
30
1600
forward voltage drop
total power dissipation
Conditions
Unit
1,63
T = 25°C
VJ
125
V
T0
V0,87T = °C
VJ
150
r
T
14,2
mΩ
V1,30T = °C
VJ
I = A
T
V
30
1,71
I = A60
I = A60
threshold voltage
slope resistance
for power loss calculation only
µA
125
V V1600T = 25°C
VJ
I A47
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0,5
average gate power dissipation
C
J
16
junction capacitance
V = V400 T = 25°Cf = 1 MH
R
VJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
400
430
580
555
A
A
A
A
340
365
800
770
1600
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V= 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
IA;V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
D
VJ
90 A
T
P
G
=0,3
di /dt A/µs;
G
=
0,3
D
DRM
cr
V =
⅔ V
D DRM
GK
1000
1V
T= °C-40
VJ
I
GT
gate trigger current
V= 6 V T = °C25
D
VJ
55 mA
T= °C-40
VJ
1,2 V
80 mA
V
GD
gate non-trigger voltage
T= °C
VJ
0,2 V
I
GD
gate non-trigger current
5mA
V =
⅔ V
D DRM
125
latching current
T= °C
VJ
150 mAI
L
25t
µs
p
=
10
IA;
G
= 0,3 di /dt A/µs
G
=0,3
holding current
T= °C
VJ
100 mAI 25V= 6 V
D
R =
∞
GK
gate controlled delay time
T= °C
VJ
2µst
gd
25
IA;
G
= 0,3 di /dt A/µs
G
=0,3
V = ½ V
D DRM
turn-off time
T= °C
VJ
150 µst
q
di/dt = A/µs;15 dv/dt = V/µs;20
V =
R
100 V; I A;
T
=30 V = ⅔ V
D DRM
t
µs
p
= 200
non-repet., I = 30 A
T
150
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0,25
IXYS reserves the right to change limits, conditions and dimensions.
20130306aData according to IEC 60747and per semiconductor unless otherwise specified
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