Datasheet

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4 - 5
MCC 255
MCD 255
IXYS reserves the right to change limits, test conditions and dimensions.
20130813c
T
C
[°C]
t [s]
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
1 10
10
4
10
5
10
6
0 25 50 75 100 125 150
0
100
200
300
400
I
T(F)SM
[A]
I
F(T)AVM
[A]
80 % V
RRM
T
VJ
= 45°C
50 Hz
T
VJ
= 130°C
T
VJ
= 130°C
R
thKA
K/W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
Circuit
B6
3xMCD255
3xMCC255 or
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
DC
I
2
dt
[A
2
s]
t [ms]
I
FAVM/TAVM
[A]
P
tot
[W]
T
A
[°C]
P
tot
[W]
I
DAVM
[A] T
A
[°C]
Fig. 3 Surge overload current
I
T(F)SM
:Crest value, t: duration
Fig. 4 I
2
dt versus time
Fig. 4a Max. forward current
at case temperature
Fig. 5 Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
T
VJ
= 45°C
R
thKA
K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0