Datasheet

© 2013 IXYS All rights reserved
2 - 5
MCC 255
MCD 255
IXYS reserves the right to change limits, test conditions and dimensions.
20130813c
Symbol Conditions Characteristic Values
typ. max.
I
RRM
, I
DRM
V
R
/ V
D
= V
RRM
/ V
DRM
T
VJ
= T
VJM
40 mA
V
T
, V
F
I
T
; I
F
= 600 A T
VJ
= 25°C 1.36 V
V
T0
r
t
For power-loss calculations only
T
VJ
= T
VJM
0.8
0.68
V
mW
V
GT
I
GT
V
D
= 6 V T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 6 V T
VJ
= 25°C
T
VJ
= -40°C
2
3
150
220
V
V
mA
mA
V
GD
I
GD
V
D
=
2
/
3
V
DRM
; T
VJ
= T
VJM
0.25
10
V
mA
I
L
t
p
= 30 µs; V
D
= 6 V T
VJ
= 25°C
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
200 mA
I
H
V
D
= 6 V; R
GK
= ∞; T
VJ
= 25°C 150 mA
t
gd
V
D
= ½V
DRM
T
VJ
= 25°C
I
G
= 1 A; di
G
/dt = 1 A/µs
2 µs
t
q
V
D
=
2
/
3
V
DRM
T
VJ
= T
VJM
dv/dt = 50 V/µs; -di/dt = 10 A/µs
I
T
= 300 A; V
R
= 100 V; t
p
= 200 µs
200 µs
Q
S
I
RM
I
T
= 300 A; -di/dt = 50 A/µs T
VJ
= T
VJM
760
275
µC
A
R
thJC
R
thJK
per thyristor; DC current
per module
per thyristor; DC current
per module
0.139
0.07
0.179
0.09
K/W
K/W
K/W
K/W
d
S
d
A
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s
2
6
5
4
3
1
limit
typ.
V
G
[V]
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
10 100 1000 10000
1
10
100
2
0.01 0.1 1 10
3: I
GT
, T
VJ
= -40°C
2: I
GT
, T
VJ
= 25°C
1: I
GT,
T
VJ
= 130°C
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
I
G
[A]
t
gd
[μs]
I
G
[A]
T
VJ
= 25°C
Fig. 3 Surge overload current
I
TSM/FSM
: Crest value, t: duration
I
GD,
T
VJ
= 130°C
Fig. 2 Gate trigger delay time