Datasheet

IXYS Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 3 Page 2 of 10 September, 2014
Characteristics
PARAMETER
MIN.
TYP.
MAX.
TEST CONDITIONS
1)
UNITS
V
TM
Maximum peak on-state voltage
-
-
1.50
I
TM
= 1700 A
V
V
TM
Maximum peak on-state voltage
-
-
1.43
I
TM
= 1500 A
V
V
T0
Threshold voltage
-
-
0.85
V
r
T
Slope resistance
-
-
0.30
m
(dv/dt)
cr
Critical rate of rise of off-state voltage
1000
-
-
V
D
= 80% V
DRM
, linear ramp, Gate o/c
V/s
I
DRM
Peak off-state current
-
-
70
Rated V
DRM
mA
I
RRM
Peak reverse current
-
-
70
Rated V
RRM
mA
V
GT
Gate trigger voltage
-
-
2.5
T
vj
= 25°C, V
D
= 12 V, I
T
= 3 A
V
I
GT
Gate trigger current
-
-
250
mA
V
GD
Gate non-trigger voltage
0.25
-
-
67% V
DRM
V
I
L
Latching current
-
-
1000
V
D
= 12 V, T
vj
= 25°C
mA
I
H
Holding current
-
-
300
V
D
= 12 V, T
vj
= 25°C
mA
t
gd
Gate controlled turn-on delay time
-
-
2.0
I
FG
= 2 A, t
r
= 1 µs, V
D
= 40%V
DRM
,
I
TM
= 1500 A, di/dt = 10 A/µs, T
vj
= 25°C
µs
t
gt
Turn-on time
-
-
8.0
Q
rr
Recovered Charge
-
1350
1550
I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10A/µs,
V
R
= 100 V
µC
Q
ra
Recovered Charge, 50% chord
-
1150
-
µC
I
rm
Reverse recovery current
-
120
-
A
t
rr
Reverse recovery time, 50% chord
-
19
-
µs
t
q
Turn-off time
-
-
200
I
TM
= 1500 A, t
p
= 1 ms, di/dt = 10 A/µs,
V
R
= 100 V, V
DR
= 67%V
DRM
, dv
DR
/dt = 50 V/µs
µs
R
thJC
Thermal resistance, junction to case
-
-
0.062
Single Thyristor
K/W
-
-
0.031
Whole Module
K/W
R
thCH
Thermal resistance, case to heatsink
-
-
0.02
Single Thyristor
K/W
-
-
0.01
Whole Module
K/W
F
1
Mounting force (to heatsink)
4.25
-
5.75
Nm
F
2
Mounting force (to terminals)
10.2
-
13.8
2)
Nm
W
t
Weight
-
1.5
-
kg
Notes:
1) Unless otherwise indicated T
vj
=125°C.
2) Screws must be lubricated.