Datasheet

Rating Report. Types M##501-12io2 and M##501-18io2 Issue 3 Page 1 of 10 September, 2014
IXYS
Date: 29.09.2014
Data Sheet Issue: 3
Thyristor/Diode Modules M## 501
Absolute Maximum Ratings
V
RRM
V
DRM
[V]
MCC
MCD
MDC
1200
501-12io2
501-12io2
501-12io2
1400
501-14io2
501-14io2
501-14io2
1600
501-16io2
501-16io2
501-16io2
1800
501-18io2
501-18io2
501-18io2
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
V
DRM
Repetitive peak off-state voltage
1)
1200-1800
V
V
DSM
Non-repetitive peak off-state voltage
1)
1300-1900
V
V
RRM
Repetitive peak reverse voltage
1)
1200-1800
V
V
RSM
Non-repetitive peak reverse voltage
1)
1300-1900
V
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
I
T(AV)M
Maximum average on-state current, T
C
= 85°C
2)
503
A
I
T(AV)M
Maximum average on-state current. T
C
= 100°C
2)
347
A
I
T(RMS)M
Nominal RMS on-state current, T
C
= 55°C
2)
1195
A
I
T(d.c.)
D.C. on-state current, T
C
= 55°C
985
A
I
TSM
Peak non-repetitive surge t
p
= 10 ms, V
RM
= 60%V
RRM
3)
14.5
kA
I
TSM2
Peak non-repetitive surge t
p
= 10 ms, V
RM
10V
3)
16.0
kA
I
2
t
I
2
t capacity for fusing t
p
= 10 ms, V
RM
= 60%V
RRM
3)
1.05×10
6
A
2
s
I
2
t
I
2
t capacity for fusing t
p
= 10 ms, V
RM
10 V
3)
1.28×10
6
A
2
s
(di/dt)
cr
Critical rate of rise of on-state current (repetitive)
4)
200
A/µs
Critical rate of rise of on-state current (non-repetitive)
4)
400
A/µs
V
RGM
Peak reverse gate voltage
5
V
P
G(AV)
Mean forward gate power
4
W
P
GM
Peak forward gate power
30
W
V
ISOL
Isolation Voltage
5)
3000
V
T
vj op
Operating temperature range
-40 to +125
°C
T
stg
Storage temperature range
-40 to +125
°C
Notes:
1) De-rating factor of 0.13% per °C is applicable for T
vj
below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C T
vj
initial.
4) V
D
= 67% V
DRM
, I
FG
= 2 A, t
r
 0.5µs, T
C
= 125°C.
5) AC RMS voltage, 50 Hz, 1min test