Datasheet

MCC56-12io1B
I
TSM
I
FSM
[A]
t [s]
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
t [ms]
I
2
t
[A
2
s]
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3 Maximum forward current
at case temperature
I
TAVM
[A]
T
C
[°C]
1500
1000
500
0
10
-3
10
-2
10
-1
10
0
10
1
T
VJ
= 45°C
T
VJ
= 125°C
50 Hz, 80% V
RRM
V
R
= 0 V
10
5
10
3
1236810
T
VJ
= 45°C
T
VJ
= 125°C
10
4
120
80
60
40
20
0
0 50 100 150
DC
180° sin
120°
60°
30°
100
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)
DC
180° sin
120°
60°
30°
050100150
T
A
[°C]I
TAVM
, I
FAVM
[A]
020 40 60 80
150
100
50
0
P
T
[W]
R
thJA
[K/W]
0.8
1
1.2
1.5
2
2.5
3
4
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
R
thKA
[K/W]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
0 50 100 150
T
A
[°C]I
dAVM
[A]
050100
P
tot
[W]
100
0
200
300
400
600
Circuit
B6
3x MCC56 or
3x MCD56
500
150
I
G
[mA]
V
G
[V]
Fig. 5 Gate trigger charact.
10
0
10
1
10
2
10
3
10
4
0.1
1
10
1: I
GT
,T
VJ
=125°C
2: I
GT
,T
VJ
=25°C
3: I
GT
,T
VJ
=-40°C
4: P
GAV
=0.5W
5: P
GM
=5W
6: P
GM
=10W
I
GD
,T
VJ
=125°C
3
4
2
1
5
6
10 100 1000
1
10
100
1000
Limit
typ.
T
VJ
=25°C
I
G
[mA]
t
gd
[µs]
Fig. 7 Gate trigger delay time
Thyristor
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20130605aData according to IEC 60747and per semiconductor unless otherwise specified
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