Datasheet

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4 - 5
MCC 95
MCD 95
IXYS reserves the right to change limits, test conditions and dimensions.
20101116a
0 50 100 150
T
a
[°C]
T
C
[°C]
t [ms]
t [s]
0.001 0.01 0.1 1
0
500
1000
1500
2000
2500
3000
1 10
10
4
10
5
0 25 50 75 100 125 150
0
50
100
150
200
250
I
TSM
[A]
I
TAVM
[A]
0 50 100 150
0
50
100
150
200
250
P
tot
[W]
I
TAVM
, I
FAVM
[A]
0 50 100 1500 100 200 300
0
200
400
600
800
1000
I
2
t
[A
2
s]
T
VJ
= 45°C
180° sin
120°
60°
30°
DC
T
VJ
= 125°C
50 Hz
80% V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
P
tot
[W]
I
dAVM
[A]
T
a
[°C]
V
R
= 0 V
180° sin
120°
60°
30°
DC
R
thKA
K/W
0.4
0.6
0.8
1
1.2
1.5
2
3
B6
Circuit
3x MCC95 or
3x MCD95
R
thKA
K/W
0.3
0.08
0.12
0.15
0.03
0.06
0.5
Fig. 3 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
Fig. 4 I
2
t versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus
on-state current & ambient
temperature
(per thyristor or diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation vs. direct
output current and ambient
temperature