Datasheet

MCC26-16io1B
t [s]
I
TSM
[A]
Fig. 1 Surge overload current
I
TSM
: Crest value, t: duration
10
-3
10
-2
10
-1
10
0
10
1
800
600
400
200
0
T
VJ
= 45°C
T
VJ
= 125°C
50 HZ, 80% V
RRM
t [ms]
I
2
t
[A
2
s]
Fig. 2 I
2
t versus time (1-10 ms)
V
R
= 0 V
T
VJ
= 45°C
T
VJ
= 125°C
10
2
10
4
10
3
1236810
I
TAVM
[A]
T
C
[°C]
Fig. 3 Max. forward current
at case temperature
60
40
30
20
10
0
50
0 50 100 150
DC
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
R
thJA
[KW]
1.5
2
2.5
3
4
5
6
8
Fig. 4 Power dissipation versus onstate current & ambient temp. (per thyristor)
P
T
[W]
T
A
[°C]I
TAV M
[A]
010203040 0 50 100 15050
80
60
40
20
0
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
P
tot
[W]
I
dAVM
[A] T
A
[°C]
Circuit
B6
3x MCC26 or
3x MCD26
R
thJA
[KW]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
0 20 40 60 0 50 100 15080
100
200
300
400
0
I
G
[mA]
V
G
[V]
Fig. 5 Gate trigger charact.
10
0
10
1
10
2
10
3
10
4
0.1
1
10
1: I
GT
,T
VJ
=125° C
2: I
GT
,T
VJ
=25°C
3: I
GT
,T
VJ
=-40°C
4: P
GAV
=0.5W
5: P
GM
=5W
6: P
GM
=10W
I
GD
,T
VJ
=125° C
3
4
2
1
5
6
10 100 1000
1
10
100
1000
Limit
typ.
T
VJ
=25°C
I
G
[mA]
t
gd
[µs]
Fig. 7 Gate trigger delay time
Thyristor
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20130606aData according to IEC 60747and per semiconductor unless otherwise specified
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