Datasheet

IXYS Thyristor/Diode Module Types M##501-12io1 to M##501-18io1
Rating Report. Types M##501-12io1 and M##501-18io1 Issue 3 Page 2 of 10 March, 2008
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
1)
UNITS
V
TM
Maximum peak on-state voltage - - 1.50 I
TM
= 1700 A V
V
TM
Maximum peak on-state voltage - - 1.43 I
TM
= 1500 A V
V
T0
Threshold voltage - - 0.85 V
r
T
Slope resistance - - 0.30
mΩ
(dv/dt)
c
r
Critical rate of rise of off-state voltage 1000 - - V
D
= 80% V
DRM
, linear ramp, Gate o/c
V/µs
I
DRM
Peak off-state current - - 70 Rated V
DRM
mA
I
RRM
Peak reverse current - - 70 Rated V
RRM
mA
V
GT
Gate trigger voltage - - 2.5 V
I
GT
Gate trigger current - - 250
T
vj
= 25°C, V
D
= 12 V, I
T
= 3 A
mA
V
GD
Gate non-trigger voltage 0.25 - - 67% V
DRM
V
I
L
Latching current - - 1000 V
D
= 12 V, T
vj
= 25°C mA
I
H
Holding current - - 300 V
D
= 12 V, T
vj
= 25°C mA
t
gd
Gate controlled turn-on delay time - - 2.0
t
gt
Turn-on time - - 8.0
I
FG
= 2 A, t
r
= 1 µs, V
D
= 40%V
DRM
,
I
TM
= 1500 A, di/dt = 10 A/µs, T
vj
= 25°C
µs
Q
rr
Recovered Charge - 1350 1550 µC
Q
ra
Recovered Charge, 50% chord - 1150 - µC
I
rm
Reverse recovery current - 120 - A
t
rr
Reverse recovery time, 50% chord - 19 -
I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10A/µs,
V
R
= 100 V
µs
t
q
Turn-off time - - 200
I
TM
= 1500 A, t
p
= 1 ms, di/dt = 10 A/µs,
V
R
= 100 V, V
DR
= 67%V
DRM
, dv
D
R
/dt = 50 V/µs
µs
--0.062 Single Thyristor K/W
R
thJC
Thermal resistance, junction to case
--
0.031 Whole Module K/W
--0.02 Single Thyristor K/W
R
thCH
Thermal resistance, case to heatsink
--
0.01 Whole Module K/W
F
1
Mounting force (to heatsink) 4.25 - 5.75 Nm
F
2
Mounting force (to terminals) 10.2 - 13.8
2)
Nm
W
t
Weight - 1.5 - kg
Notes:
1) Unless otherwise indicated T
vj
=125°C.
2) Screws must be lubricated.