Datasheet

Rating Report. Types M##501-12io1 and M##501-18io1 Issue 3 Page 1 of 10 March, 2008
IXYS
Date: 05.03.2008
Data Sheet Issue: 3
Thyristor/Diode Modules M## 501
Absolute Maximum Ratings
V
RRM
V
DRM
[V]
MCC MCD MDC
1200 501-12io1 501-12io1 501-12io1
1400 501-14io1 501-14io1 501-14io1
1600 501-16io1 501-16io1 501-16io1
1800 501-18io1 501-18io1 501-18io1
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
V
DRM
Repetitive peak off-state voltage
1)
1200-1800 V
V
DSM
Non-repetitive peak off-state voltage
1)
1300-1900 V
V
RRM
Repetitive peak reverse voltage
1)
1200-1800 V
V
RSM
Non-repetitive peak reverse voltage
1)
1300-1900 V
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
I
T(AV)M
Maximum average on-state current, T
C
= 85°C
2)
503 A
I
T(AV)M
Maximum average on-state current. T
C
= 100°C
2)
347 A
I
T(RMS)M
Nominal RMS on-state current, T
C
= 55°C
2)
1195 A
I
T(d.c.)
D.C. on-state current, T
C
= 55°C 985 A
I
TSM
Peak non-repetitive surge t
p
= 10 ms, V
RM
= 60%V
RRM
3)
14.5 kA
I
TSM2
Peak non-repetitive surge t
p
= 10 ms, V
RM
≤ 10V
3)
16.0 kA
I
2
tI
2
t capacity for fusing t
p
= 10 ms, V
RM
= 60%V
RRM
3)
1.05×10
6
A
2
s
I
2
t
I
2
t capacity for fusing t
p
= 10 ms, V
RM
≤ 10 V
3)
1.28×10
6
A
2
s
Critical rate of rise of on-state current (repetitive)
4)
200 A/µs
(di/dt)
cr
Critical rate of rise of on-state current (non-repetitive)
4)
400 A/µs
V
RGM
Peak reverse gate voltage 5 V
P
G(AV)
Mean forward gate power 4 W
P
GM
Peak forward gate power 30 W
V
ISOL
Isolation Voltage
5)
3000 V
T
vj op
Operating temperature range -40 to +125 °C
T
stg
Storage temperature range -40 to +50 °C
Notes:
1) De-rating factor of 0.13% per °C is applicable for Tv
j
below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C T
vj
initial.
4) V
D
= 67% V
DRM
, I
FG
= 2 A, t
r
≤ 0.5µs, T
C
= 125°C.
5) AC RMS voltage, 50 Hz, 1min test